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Channel engineering of SOI MOSFETs for RF applications

dc.contributor.authorKeast, Craig L.
dc.contributor.authorWyatt, Peter W.
dc.contributor.authorHealey, Paul D.
dc.contributor.authorYost, Donna-Ruth W.
dc.contributor.authorGouker, Pascale M.
dc.contributor.authorChen, Chenson K.
dc.contributor.authorKedzierski, Jakub T.
dc.contributor.authorKnecht, Jeffrey M.
dc.contributor.authorChen, Chang-Lee
dc.date.accessioned2010-04-23T15:18:52Z
dc.date.available2010-04-23T15:18:52Z
dc.date.issued2009-10
dc.identifier.isbn978-1-4244-4256-0
dc.identifier.urihttp://hdl.handle.net/1721.1/53745
dc.description.abstractChannel engineering of SOI MOSFETs is explored by altering ion implantation without adding any new fabrication steps to the standard CMOS process. The effects of implantation on characteristics important for RF applications, such as transconductance, output resistance, breakdown voltage, are compared. Data show that the best overall RF MOSFET has no body and drain-extension implants.en
dc.description.sponsorshipDefense Advanced Research Projects Agency (Air Force Contract FA8721-05-C-0002)en
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineersen
dc.relation.isversionofhttp://dx.doi.org/10.1109/SOI.2009.5318756en
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en
dc.sourceIEEEen
dc.titleChannel engineering of SOI MOSFETs for RF applicationsen
dc.typeArticleen
dc.identifier.citationChen, C.L. et al. “Channel engineering of SOI MOSFETs for RF applications.” SOI Conference, 2009 IEEE International. 2009. 1-2. © 2009 IEEEen
dc.contributor.departmentLincoln Laboratoryen_US
dc.contributor.approverChen, Chang-Lee
dc.contributor.mitauthorKeast, Craig L.
dc.contributor.mitauthorWyatt, Peter W.
dc.contributor.mitauthorHealey, Paul D.
dc.contributor.mitauthorYost, Donna-Ruth W.
dc.contributor.mitauthorGouker, Pascale M.
dc.contributor.mitauthorChen, Chenson K.
dc.contributor.mitauthorKedzierski, Jakub T.
dc.contributor.mitauthorKnecht, Jeffrey M.
dc.contributor.mitauthorChen, Chang-Lee
dc.relation.journal2009 IEEE International SOI Conferenceen
dc.eprint.versionFinal published versionen
dc.type.urihttp://purl.org/eprint/type/ConferencePaperen
eprint.statushttp://purl.org/eprint/status/PeerRevieweden
dspace.orderedauthorsChen, C. L.; Knecht, J. M.; Kedzierski, J.; Chen, C. K.; Gouker, P. M.; Yost, D-R.; Healey, P.; Wyatt, P. W.; Keast, C. L.en
mit.licensePUBLISHER_POLICYen
mit.metadata.statusComplete


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