Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition

Author(s)
Keast, Craig L.; Wyatt, Peter W.; Kong, Jing; Reina, Alfonso; Hsu, Pei-Lan; ... Show more
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Abstract
Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO[subscript 2] substrate. The properties and integration of these graphene-on-insulator transistors are presented and compared to the characteristics of devices made from graphitized SiC and exfoliated graphene flakes.
Date issued
2009-06
URI
http://hdl.handle.net/1721.1/55368
Department
Lincoln Laboratory
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers
Citation
Kedzierski, J. et al. “Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition.” Electron Device Letters, IEEE 30.7 (2009): 745-747. © 2009 Institute of Electrical and Electronics Engineers.
Version: Final published version
Other identifiers
INSPEC Accession Number: 10731591
ISSN
0741-3106
Keywords
graphene transistors, graphene, epitaxial graphene, chemical-vapor deposition (CVD), carbon transistors, Carbon CVD
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