Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition
Author(s)Keast, Craig L.; Wyatt, Peter W.; Kong, Jing; Reina, Alfonso; Hsu, Pei-Lan; Healey, Paul D.; Kedzierski, Jakub T.; ... Show more Show less
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Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO[subscript 2] substrate. The properties and integration of these graphene-on-insulator transistors are presented and compared to the characteristics of devices made from graphitized SiC and exfoliated graphene flakes.
IEEE Electron Device Letters
Institute of Electrical and Electronics Engineers
Kedzierski, J. et al. “Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition.” Electron Device Letters, IEEE 30.7 (2009): 745-747. © 2009 Institute of Electrical and Electronics Engineers.
Final published version
INSPEC Accession Number: 10731591
graphene transistors, graphene, epitaxial graphene, chemical-vapor deposition (CVD), carbon transistors, Carbon CVD