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Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition

dc.contributor.authorKeast, Craig L.
dc.contributor.authorWyatt, Peter W.
dc.contributor.authorKong, Jing
dc.contributor.authorReina, Alfonso
dc.contributor.authorHsu, Pei-Lan
dc.contributor.authorHealey, Paul D.
dc.contributor.authorKedzierski, Jakub T.
dc.date.accessioned2010-06-02T18:08:31Z
dc.date.available2010-06-02T18:08:31Z
dc.date.issued2009-06
dc.date.submitted2009-02
dc.identifier.issn0741-3106
dc.identifier.otherINSPEC Accession Number: 10731591
dc.identifier.urihttp://hdl.handle.net/1721.1/55368
dc.description.abstractGraphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO[subscript 2] substrate. The properties and integration of these graphene-on-insulator transistors are presented and compared to the characteristics of devices made from graphitized SiC and exfoliated graphene flakes.en
dc.description.sponsorshipDefence Advanced Research Projects Agency (Air Force Contract FA8721-05-C002)en
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineersen
dc.relation.isversionofhttp://dx.doi.org/10.1109/led.2009.2020615en
dc.rightsArticle is made available in accordance with the publisher’s policy and may be subject to US copyright law. Please refer to the publisher’s site for terms of use.en
dc.sourceIEEEen
dc.subjectgraphene transistorsen
dc.subjectgrapheneen
dc.subjectepitaxial grapheneen
dc.subjectchemical-vapor deposition (CVD)en
dc.subjectcarbon transistorsen
dc.subjectCarbon CVDen
dc.titleGraphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Depositionen
dc.typeArticleen
dc.identifier.citationKedzierski, J. et al. “Graphene-on-Insulator Transistors Made Using C on Ni Chemical-Vapor Deposition.” Electron Device Letters, IEEE 30.7 (2009): 745-747. © 2009 Institute of Electrical and Electronics Engineers.en
dc.contributor.departmentLincoln Laboratoryen_US
dc.contributor.approverKedzierski, Jakub T.
dc.contributor.mitauthorKeast, Craig L.
dc.contributor.mitauthorWyatt, Peter W.
dc.contributor.mitauthorKong, Jing
dc.contributor.mitauthorReina, Alfonso
dc.contributor.mitauthorHsu, Pei-Lan
dc.contributor.mitauthorHealey, Paul D.
dc.contributor.mitauthorKedzierski, Jakub T.
dc.relation.journalIEEE Electron Device Lettersen
dc.eprint.versionFinal published versionen
dc.type.urihttp://purl.org/eprint/type/JournalArticleen
eprint.statushttp://purl.org/eprint/status/PeerRevieweden
dspace.orderedauthorsKedzierski, J.; Pei-Lan Hsu, J.; Reina, A.; Jing Kong, A.; Healey, P.; Wyatt, P.; Keast, C.en
dc.identifier.orcidhttps://orcid.org/0000-0003-0551-1208
mit.licensePUBLISHER_POLICYen
mit.metadata.statusComplete


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