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dc.contributor.authorLevitov, Leonid
dc.contributor.authorAbanin, Dmitry A.
dc.contributor.authorSkachko, I.
dc.contributor.authorDu, X.
dc.contributor.authorAndrei, E. Y.
dc.date.accessioned2010-08-12T18:55:35Z
dc.date.available2010-08-12T18:55:35Z
dc.date.issued2010-03
dc.date.submitted2010-01
dc.identifier.issn1098-0121
dc.identifier.urihttp://hdl.handle.net/1721.1/57498
dc.description.abstractRecently, fractional-quantized Hall effect was observed in suspended graphene (SG), a free-standing monolayer of carbon, where it was found to persist up to T=10 K. The best results in those experiments were obtained on micron-size flakes, on which only two-terminal transport measurements could be performed. Here we address the problem of extracting transport coefficients of a fractional quantum Hall state from the two-terminal conductance. We develop a general method, based on the conformal invariance of two-dimensional magnetotransport, and employ it to analyze the measurements on SG. From the temperature dependence of longitudinal conductivity, extracted from the measured two-terminal conductance, we estimate the energy gap of quasiparticle excitations in the fractional-quantized ν=1/3 state. The gap is found to be significantly larger than in GaAs-based structures, signaling much stronger electron interactions in suspended graphene. Our approach provides a tool for the studies of quantum transport in suspended graphene and other nanoscale systems.en_US
dc.language.isoen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.81.115410en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleFractional quantum Hall effect in suspended graphene: Transport coefficients and electron interaction strengthen_US
dc.typeArticleen_US
dc.identifier.citationAbanin, D. A. et al. “Fractional quantum Hall effect in suspended graphene: Transport coefficients and electron interaction strength.” Physical Review B 81.11 (2010): 115410. © 2010 The American Physical Society.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.approverLevitov, Leonid
dc.contributor.mitauthorLevitov, Leonid
dc.contributor.mitauthorAbanin, Dmitry A.
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsAbanin, D. A.; Skachko, I.; Du, X.; Andrei, E. Y.; Levitov, L. S.en
dc.identifier.orcidhttps://orcid.org/0000-0002-4268-731X
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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