Electron-beam Directed Materials Assembly
Author(s)
Fedynyshyn, Theodore H.; Kingsborough, Richard P.; Goodman, Russell B.; Astolfi, David K.
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We have developed a processing method that employs direct surface imaging of a surface-modified silicon wafer to define a chemical nanopattern that directs material assembly, eliminating most of the traditional processing steps. Defining areas of high and low surface energy by selective alkylsiloxane removal that match the polymer period length leads to defect-free grating structures of poly(styrene-block-methyl methacrylate) (PS-b-PMMA). We have performed initial studies to extend this concept to other wavelengths beyond 157 nm. In this present paper, we will show that electron beam lithography can also be used to define chemical nanopatterns to direct the assembly of PS-b-PMMA films. Half-pitch patterns resulted in the directed assembly of PS-b-PMMA films. Electron beam lithography can also be used to prepare surfaces for pitch division. Instead of the deposition of an HSQ pinning structure as is currently done, we will show that by writing an asymmetric pattern, we can fill in the space with smaller lamellar period block copolymers to shrink the overall pitch and allow for 15-nm features.
Date issued
2010-04Department
Lincoln LaboratoryJournal
Proceedings of SPIE--the International Society for Optical Engineering, v. 7637
Publisher
SPIE
Citation
Kingsborough, Richard P. et al. “Electron-beam directed materials assembly.” Alternative Lithographic Technologies II. Ed. Daniel J. C. Herr. ©2010 SPIE
Version: Final published version
ISSN
0277-786X
Keywords
Block copolymer, Directed self-assembly