| dc.contributor.author | Bright, V. M. | |
| dc.contributor.author | Anderson, D. Z. | |
| dc.contributor.author | Salim, E. A. | |
| dc.contributor.author | Chuang, H. C. | |
| dc.contributor.author | Vuletic, Vladan | |
| dc.date.accessioned | 2010-10-08T14:19:00Z | |
| dc.date.available | 2010-10-08T14:19:00Z | |
| dc.date.issued | 2009-10 | |
| dc.identifier.isbn | 978-1-4244-4190-7 | |
| dc.identifier.isbn | 978-1-4244-4193-8 | |
| dc.identifier.other | INSPEC Accession Number: 10917191 | |
| dc.identifier.uri | http://hdl.handle.net/1721.1/58962 | |
| dc.description.abstract | This paper describes the design and fabrication of an atom chip for atom tunneling experiments. A fabrication process was developed that uses a combination of UV-optical and Electron-Beam lithography to pattern micrometer and nanometer scale copper wires on a single chip. The minimum wire width fabricated in this work is 200 nm. The wires can carry current densities of more than 7.5times10[superscript 7] A/cm[superscript 2]. The electrical current tests establish the feasibility of realizing chip-based atom tunneling experiments. | en_US |
| dc.language.iso | en_US | |
| dc.publisher | Institute of Electrical and Electronics Engineers | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1109/SENSOR.2009.5285870 | en_US |
| dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
| dc.source | IEEE | en_US |
| dc.subject | Atom Chips | en_US |
| dc.subject | Atom Transistor | en_US |
| dc.subject | Atom Tunneling | en_US |
| dc.subject | Bose-Einstein Condensation (BEC) | en_US |
| dc.subject | E-Beam Lithography | en_US |
| dc.subject | Suspended Nanowires | en_US |
| dc.title | Fabrication and process characterization of atom transistor chips | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | Chuang, H.C. et al. “Fabrication and process characterization of atom transistor chips.” Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International. 2009. 1305-1308. © 2009 IEEE | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Physics | en_US |
| dc.contributor.department | MIT-Harvard Center for Ultracold Atoms | en_US |
| dc.contributor.approver | Vuletic, Vladan | |
| dc.contributor.mitauthor | Vuletic, Vladan | |
| dc.relation.journal | Proceedings of the Solid-State Sensors, Actuators and Microsystems Conference, 2009 | en_US |
| dc.eprint.version | Final published version | en_US |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
| eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
| dspace.orderedauthors | Chuang, H.C.; Salim, E.A.; Vuletic, V.; Anderson, D.Z.; Bright, V.M. | en |
| dc.identifier.orcid | https://orcid.org/0000-0002-9786-0538 | |
| mit.license | PUBLISHER_POLICY | en_US |
| mit.metadata.status | Complete | |
