Seamless On-wafer integration of GaN HEMTs and Si(100) MOSFETs

Author(s)
Palacios, Tomas; Piner, E. L.; Lee, J.; Chung, J. W.
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Abstract
The integration of III-V compound semiconductors and silicon (100) CMOS technologies has been a long pursued goal. A robust low-cost heterogeneous integration technology would make the outstanding analog and mixed-signal performance of compound semiconductor electronics available on an as-needed basis to realize key functions on VLSI chips that are difficult to implement in Si technology. In this paper, we demonstrate the first on-wafer integration of AlGaN/GaN high electron mobility transistors (HEMTs) with Si(100) MOSFETs.
Date issued
2009-12
URI
http://hdl.handle.net/1721.1/58968
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Journal
Device Research Conference, 2009. DRC 2009
Publisher
Institute of Electrical and Electronics Engineers
Citation
Chung, J.W. et al. “Seamless on-wafer integration of GaN HEMTs and Si(100) MOSFETs.” Device Research Conference, 2009. DRC 2009. 2009. 155-156. ©2009 Institute of Electrical and Electronics Engineers.
Version: Final published version
Other identifiers
INSPEC Accession Number: 11010542
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