| dc.contributor.author | Palacios, Tomas | |
| dc.contributor.author | Piner, E. L. | |
| dc.contributor.author | Lee, J. | |
| dc.contributor.author | Chung, J. W. | |
| dc.date.accessioned | 2010-10-08T15:12:15Z | |
| dc.date.available | 2010-10-08T15:12:15Z | |
| dc.date.issued | 2009-12 | |
| dc.date.submitted | 2000-06 | |
| dc.identifier.govdoc | 978-1-4244-3528-9 | |
| dc.identifier.other | INSPEC Accession Number: 11010542 | |
| dc.identifier.uri | http://hdl.handle.net/1721.1/58968 | |
| dc.description.abstract | The integration of III-V compound semiconductors and silicon (100) CMOS technologies has been a long pursued goal. A robust low-cost heterogeneous integration technology would make the outstanding analog and mixed-signal performance of compound semiconductor electronics available on an as-needed basis to realize key functions on VLSI chips that are difficult to implement in Si technology. In this paper, we demonstrate the first on-wafer integration of AlGaN/GaN high electron mobility transistors (HEMTs) with Si(100) MOSFETs. | en_US |
| dc.description.sponsorship | Microelectronics and Computer Technology Corporation | en_US |
| dc.description.sponsorship | United States. Defense Advanced Research Projects Agency | en_US |
| dc.description.sponsorship | Korea Foundation for Advanced Studies | en_US |
| dc.description.sponsorship | Microelectronics Advanced Research Corporation (MARCO)/Interconnect Focus Center (IFC). | |
| dc.language.iso | en_US | |
| dc.publisher | Institute of Electrical and Electronics Engineers | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1109/DRC.2009.5354963 | en_US |
| dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
| dc.source | IEEE | en_US |
| dc.title | Seamless On-wafer integration of GaN HEMTs and Si(100) MOSFETs | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | Chung, J.W. et al. “Seamless on-wafer integration of GaN HEMTs and Si(100) MOSFETs.” Device Research Conference, 2009. DRC 2009. 2009. 155-156. ©2009 Institute of Electrical and Electronics Engineers. | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
| dc.contributor.approver | Palacios, Tomas | |
| dc.contributor.mitauthor | Palacios, Tomas | |
| dc.contributor.mitauthor | Lee, J. | |
| dc.contributor.mitauthor | Chung, J. W. | |
| dc.relation.journal | Device Research Conference, 2009. DRC 2009 | en_US |
| dc.eprint.version | Final published version | en_US |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
| eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
| dspace.orderedauthors | Chung, J.W.; Lee, J.; Piner, E.L.; Palacios, T. | en |
| dc.identifier.orcid | https://orcid.org/0000-0002-2190-563X | |
| mit.license | PUBLISHER_POLICY | en_US |
| mit.metadata.status | Complete | |
