Critical Voltage for Electrical Reliability of GaN High Electron Mobility Transistors on Si Substrate
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We have evaluated the electrical reliability of GaN HEMTs on Si by carrying out V[subscript DS] = 0 V step-stress experiments. We have found that these devices show a degradation pattern that is very similar to that of devices on SiC with a critical voltage at which a sudden degradation of the gate current takes place. In general, devices on Si have a relatively high critical voltage although its distribution on a wafer is fairly broad even on a short-range scale.
Date issued
2009-11Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer ScienceJournal
Reliability of Compound Semiconductors Digest (ROCS), 2009
Publisher
Institute of Electrical and Electronics Engineers
Citation
Demirtas, S., and J.A. del Alamo. “Critical voltage for electrical reliability of GaN high electron mobility transistors on Si substrate.” Reliability of Compound Semiconductors Digest (ROCS), 2009. 2009. 53-56. © Copyright 2009 IEEE
Version: Final published version
Other identifiers
INSPEC Accession Number: 10964140