| dc.contributor.author | Demirtas, Sefa | |
| dc.contributor.author | del Alamo, Jesus A. | |
| dc.date.accessioned | 2010-10-08T17:21:16Z | |
| dc.date.available | 2010-10-08T17:21:16Z | |
| dc.date.issued | 2009-11 | |
| dc.date.submitted | 2009-10 | |
| dc.identifier.ismn | 978-0-7908-0124-7 | |
| dc.identifier.other | INSPEC Accession Number: 10964140 | |
| dc.identifier.uri | http://hdl.handle.net/1721.1/58977 | |
| dc.description.abstract | We have evaluated the electrical reliability of GaN HEMTs on Si by carrying out V[subscript DS] = 0 V step-stress experiments. We have found that these devices show a degradation pattern that is very similar to that of devices on SiC with a critical voltage at which a sudden degradation of the gate current takes place. In general, devices on Si have a relatively high critical voltage although its distribution on a wafer is fairly broad even on a short-range scale. | en_US |
| dc.description.sponsorship | United States. Defense Advanced Research Projects Agency (DARPA) (ARL contract #W911QX-05-C-0087) | en_US |
| dc.description.sponsorship | United States. Office of Naval Research (Grant #N00014-08-1-0655) | en_US |
| dc.language.iso | en_US | |
| dc.publisher | Institute of Electrical and Electronics Engineers | en_US |
| dc.relation.isversionof | http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5313988 | en_US |
| dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
| dc.source | IEEE | en_US |
| dc.title | Critical Voltage for Electrical Reliability of GaN High Electron Mobility Transistors on Si Substrate | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | Demirtas, S., and J.A. del Alamo. “Critical voltage for electrical reliability of GaN high electron mobility transistors on Si substrate.” Reliability of Compound Semiconductors Digest (ROCS), 2009. 2009. 53-56. © Copyright 2009 IEEE | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
| dc.contributor.approver | del Alamo, Jesus A. | |
| dc.contributor.mitauthor | Demirtas, Sefa | |
| dc.contributor.mitauthor | del Alamo, Jesus A. | |
| dc.relation.journal | Reliability of Compound Semiconductors Digest (ROCS), 2009 | en_US |
| dc.eprint.version | Final published version | en_US |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
| eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
| dspace.orderedauthors | Demirtas, S.; del Alamo, Jesus A. | |
| mit.license | PUBLISHER_POLICY | en_US |
| mit.metadata.status | Complete | |
