Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies

Author(s)
Gouker, Pascale M.; Gadlage, Matthew J.; Ahlbin, Jonathan R.; Ramachandra, Vishwanath; Dinkin, Cody A.; ... Show more
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Abstract
Factors that affect single-event transient pulse widths, such as drift, diffusion, and parasitic bipolar transistor parameters, are also strong functions of operating temperature. In this paper, SET pulse-width measurements are performed over a wide temperature range in both bulk and fully-depleted SOI (silicon on insulator) technologies. The average pulse-width increases with temperature for the bulk process, but not for the FDSOI process.
Date issued
2009-12
URI
http://hdl.handle.net/1721.1/59317
Department
Lincoln Laboratory
Journal
IEEE Transactions on Nuclear Science
Publisher
Institute of Electrical and Electronics Engineers
Citation
Gadlage, M.J. et al. “Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies.” Nuclear Science, IEEE Transactions on 56.6 (2009): 3115-3121. ©2009 Institute of Electrical and Electronics Engineers.
Version: Final published version
Other identifiers
INSPEC Accession Number: 11019224
ISSN
0018-9499
Keywords
Heavy ions, ion radiation effects, silicon-on-insulator technology, single event transients, single event upset (SEU)
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