Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies
Author(s)Gouker, Pascale M.; Gadlage, Matthew J.; Ahlbin, Jonathan R.; Ramachandra, Vishwanath; Dinkin, Cody A.; Bhuva, Bharat L.; Narasimham, Balaji; Schrimpf, Ronald D.; McCurdy, Michael W.; Alles, Michael L.; Reed, Robert A.; Mendenhall, Marcus H.; Massengill, Lloyd W.; Shuler, Robert L.; McMorrow, Dale; ... Show more Show less
DownloadGadlage-2009-Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies.pdf (751.1Kb)
MetadataShow full item record
Factors that affect single-event transient pulse widths, such as drift, diffusion, and parasitic bipolar transistor parameters, are also strong functions of operating temperature. In this paper, SET pulse-width measurements are performed over a wide temperature range in both bulk and fully-depleted SOI (silicon on insulator) technologies. The average pulse-width increases with temperature for the bulk process, but not for the FDSOI process.
IEEE Transactions on Nuclear Science
Institute of Electrical and Electronics Engineers
Gadlage, M.J. et al. “Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies.” Nuclear Science, IEEE Transactions on 56.6 (2009): 3115-3121. ©2009 Institute of Electrical and Electronics Engineers.
Final published version
INSPEC Accession Number: 11019224
Heavy ions, ion radiation effects, silicon-on-insulator technology, single event transients, single event upset (SEU)