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dc.contributor.authorGouker, Pascale M.
dc.contributor.authorGadlage, Matthew J.
dc.contributor.authorAhlbin, Jonathan R.
dc.contributor.authorRamachandra, Vishwanath
dc.contributor.authorDinkin, Cody A.
dc.contributor.authorBhuva, Bharat L.
dc.contributor.authorNarasimham, Balaji
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.authorMcCurdy, Michael W.
dc.contributor.authorAlles, Michael L.
dc.contributor.authorReed, Robert A.
dc.contributor.authorMendenhall, Marcus H.
dc.contributor.authorMassengill, Lloyd W.
dc.contributor.authorShuler, Robert L.
dc.contributor.authorMcMorrow, Dale
dc.date.accessioned2010-10-14T14:21:02Z
dc.date.available2010-10-14T14:21:02Z
dc.date.issued2009-12
dc.identifier.issn0018-9499
dc.identifier.otherINSPEC Accession Number: 11019224
dc.identifier.urihttp://hdl.handle.net/1721.1/59317
dc.description.abstractFactors that affect single-event transient pulse widths, such as drift, diffusion, and parasitic bipolar transistor parameters, are also strong functions of operating temperature. In this paper, SET pulse-width measurements are performed over a wide temperature range in both bulk and fully-depleted SOI (silicon on insulator) technologies. The average pulse-width increases with temperature for the bulk process, but not for the FDSOI process.en_US
dc.description.sponsorshipNAVSEC (Organization : U.S.). Crane Divisionen_US
dc.description.sponsorshipUnited States. National Aeronautics and Space Administrationen_US
dc.description.sponsorshipUnited States. Defense Threat Reduction Agencyen_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/tns.2009.2034150en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceIEEEen_US
dc.subjectHeavy ionsen_US
dc.subjection radiation effectsen_US
dc.subjectsilicon-on-insulator technologyen_US
dc.subjectsingle event transientsen_US
dc.subjectsingle event upset (SEU)en_US
dc.titleTemperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologiesen_US
dc.typeArticleen_US
dc.identifier.citationGadlage, M.J. et al. “Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies.” Nuclear Science, IEEE Transactions on 56.6 (2009): 3115-3121. ©2009 Institute of Electrical and Electronics Engineers.en_US
dc.contributor.departmentLincoln Laboratoryen_US
dc.contributor.approverGouker, Pascale M.
dc.contributor.mitauthorGouker, Pascale M.
dc.relation.journalIEEE Transactions on Nuclear Scienceen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsGadlage, Matthew J.; Ahlbin, Jonathan R.; Ramachandran, Vishwanath; Gouker, Pascale; Dinkins, Cody A.; Bhuva, Bharat L.; Narasimham, Balaji; Schrimpf, Ronald D.; McCurdy, Michael W.; Alles, Michael L.; Reed, Robert A.; Mendenhall, Marcus H.; Massengill, Lloyd W.; Shuler, Robert L.; McMorrow, Daleen
mit.licensePUBLISHER_POLICYen_US


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