dc.contributor.author | Gouker, Pascale M. | |
dc.contributor.author | Gadlage, Matthew J. | |
dc.contributor.author | Ahlbin, Jonathan R. | |
dc.contributor.author | Ramachandra, Vishwanath | |
dc.contributor.author | Dinkin, Cody A. | |
dc.contributor.author | Bhuva, Bharat L. | |
dc.contributor.author | Narasimham, Balaji | |
dc.contributor.author | Schrimpf, Ronald D. | |
dc.contributor.author | McCurdy, Michael W. | |
dc.contributor.author | Alles, Michael L. | |
dc.contributor.author | Reed, Robert A. | |
dc.contributor.author | Mendenhall, Marcus H. | |
dc.contributor.author | Massengill, Lloyd W. | |
dc.contributor.author | Shuler, Robert L. | |
dc.contributor.author | McMorrow, Dale | |
dc.date.accessioned | 2010-10-14T14:21:02Z | |
dc.date.available | 2010-10-14T14:21:02Z | |
dc.date.issued | 2009-12 | |
dc.identifier.issn | 0018-9499 | |
dc.identifier.other | INSPEC Accession Number: 11019224 | |
dc.identifier.uri | http://hdl.handle.net/1721.1/59317 | |
dc.description.abstract | Factors that affect single-event transient pulse widths, such as drift, diffusion, and parasitic bipolar transistor parameters, are also strong functions of operating temperature. In this paper, SET pulse-width measurements are performed over a wide temperature range in both bulk and fully-depleted SOI (silicon on insulator) technologies. The average pulse-width increases with temperature for the bulk process, but not for the FDSOI process. | en_US |
dc.description.sponsorship | NAVSEC (Organization : U.S.). Crane Division | en_US |
dc.description.sponsorship | United States. National Aeronautics and Space Administration | en_US |
dc.description.sponsorship | United States. Defense Threat Reduction Agency | en_US |
dc.language.iso | en_US | |
dc.publisher | Institute of Electrical and Electronics Engineers | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1109/tns.2009.2034150 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | IEEE | en_US |
dc.subject | Heavy ions | en_US |
dc.subject | ion radiation effects | en_US |
dc.subject | silicon-on-insulator technology | en_US |
dc.subject | single event transients | en_US |
dc.subject | single event upset (SEU) | en_US |
dc.title | Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Gadlage, M.J. et al. “Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies.” Nuclear Science, IEEE Transactions on 56.6 (2009): 3115-3121. ©2009 Institute of Electrical and Electronics Engineers. | en_US |
dc.contributor.department | Lincoln Laboratory | en_US |
dc.contributor.approver | Gouker, Pascale M. | |
dc.contributor.mitauthor | Gouker, Pascale M. | |
dc.relation.journal | IEEE Transactions on Nuclear Science | en_US |
dc.eprint.version | Final published version | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dspace.orderedauthors | Gadlage, Matthew J.; Ahlbin, Jonathan R.; Ramachandran, Vishwanath; Gouker, Pascale; Dinkins, Cody A.; Bhuva, Bharat L.; Narasimham, Balaji; Schrimpf, Ronald D.; McCurdy, Michael W.; Alles, Michael L.; Reed, Robert A.; Mendenhall, Marcus H.; Massengill, Lloyd W.; Shuler, Robert L.; McMorrow, Dale | en |
mit.license | PUBLISHER_POLICY | en_US |
mit.metadata.status | Complete | |