A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates
DownloadKazior-2009-A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates.pdf (1.039Mb)
PUBLISHER_POLICY
Publisher Policy
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Terms of use
Metadata
Show full item recordAbstract
We present results on the direct monolithic integration of III-V devices and Si CMOS on a silicon substrate. InP HBTs (0.5 times 5 um2 emitter) with ft and fmax > 200 GHz were grown directly in windows adjacent to CMOS transistors on silicon template wafers or SOLES (Silicon on Lattices Engineered Substrates). A BCB based multilayer interconnect process was used to interconnect the InP HBT and Si CMOS to create a differential amplifier demonstration circuit. The heterogeneously integrated differential amplifier serves as the building block for high speed, low power dissipation mixed signal circuits such as ADCs and DACs.
Date issued
2009-07Department
MIT Materials Research LaboratoryJournal
IEEE MTT-S International Microwave Symposium Digest, 2009 MTT '09
Publisher
Institute of Electrical and Electronics Engineers
Citation
Kazior, T.E. et al. “A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates.” Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International. 2009. 1113-1116. © 2009 Institute of Electrical and Electronics Engineers.
Version: Final published version
Other identifiers
INSPEC Accession Number: 10788899
ISBN
978-1-4244-2803-8
ISSN
0149-645X
Keywords
CMOS integrated circuits, Differential amplifiers, Indium Phosphide, Heterojunction bipolar transistors, Monolithic integrated circuits, Silicon