A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates
Author(s)Bulsara, Mayank; Fitzgerald, Eugene A.; LaRoche, J. R.; Kazior, T. E.; Lubyshev, D.; Fastenau, J. M.; Liu, W. K.; Urteaga, M.; Ha, W.; Bergman, J.; Choe, M. J.; Smith, D.; Clark, D.; Thompson, R.; Drazek, C.; Daval, N.; Benaissa, L.; Augendre, E.; ... Show more Show less
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We present results on the direct monolithic integration of III-V devices and Si CMOS on a silicon substrate. InP HBTs (0.5 times 5 um2 emitter) with ft and fmax > 200 GHz were grown directly in windows adjacent to CMOS transistors on silicon template wafers or SOLES (Silicon on Lattices Engineered Substrates). A BCB based multilayer interconnect process was used to interconnect the InP HBT and Si CMOS to create a differential amplifier demonstration circuit. The heterogeneously integrated differential amplifier serves as the building block for high speed, low power dissipation mixed signal circuits such as ADCs and DACs.
DepartmentMIT Materials Research Laboratory
IEEE MTT-S International Microwave Symposium Digest, 2009 MTT '09
Institute of Electrical and Electronics Engineers
Kazior, T.E. et al. “A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates.” Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International. 2009. 1113-1116. © 2009 Institute of Electrical and Electronics Engineers.
Final published version
INSPEC Accession Number: 10788899
CMOS integrated circuits, Differential amplifiers, Indium Phosphide, Heterojunction bipolar transistors, Monolithic integrated circuits, Silicon