dc.contributor.author | Bulsara, Mayank | |
dc.contributor.author | Fitzgerald, Eugene A. | |
dc.contributor.author | LaRoche, J. R. | |
dc.contributor.author | Kazior, T. E. | |
dc.contributor.author | Lubyshev, D. | |
dc.contributor.author | Fastenau, J. M. | |
dc.contributor.author | Liu, W. K. | |
dc.contributor.author | Urteaga, M. | |
dc.contributor.author | Ha, W. | |
dc.contributor.author | Bergman, J. | |
dc.contributor.author | Choe, M. J. | |
dc.contributor.author | Smith, D. | |
dc.contributor.author | Clark, D. | |
dc.contributor.author | Thompson, R. | |
dc.contributor.author | Drazek, C. | |
dc.contributor.author | Daval, N. | |
dc.contributor.author | Benaissa, L. | |
dc.contributor.author | Augendre, E. | |
dc.date.accessioned | 2010-10-20T20:11:08Z | |
dc.date.available | 2010-10-20T20:11:08Z | |
dc.date.issued | 2009-07 | |
dc.date.submitted | 2009-06 | |
dc.identifier.isbn | 978-1-4244-2803-8 | |
dc.identifier.issn | 0149-645X | |
dc.identifier.other | INSPEC Accession Number: 10788899 | |
dc.identifier.uri | http://hdl.handle.net/1721.1/59435 | |
dc.description.abstract | We present results on the direct monolithic integration of III-V devices and Si CMOS on a silicon substrate. InP HBTs (0.5 times 5 um2 emitter) with ft and fmax > 200 GHz were grown directly in windows adjacent to CMOS transistors on silicon template wafers or SOLES (Silicon on Lattices Engineered Substrates). A BCB based multilayer interconnect process was used to interconnect the InP HBT and Si CMOS to create a differential amplifier demonstration circuit. The heterogeneously integrated differential amplifier serves as the building block for high speed, low power dissipation mixed signal circuits such as ADCs and DACs. | en_US |
dc.description.sponsorship | United States. Defense Advanced Research Projects Agency. COSMOS Program (Contract Number N00014-07-C-0629) | en_US |
dc.language.iso | en_US | |
dc.publisher | Institute of Electrical and Electronics Engineers | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1109/MWSYM.2009.5165896 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | IEEE | en_US |
dc.subject | CMOS integrated circuits | en_US |
dc.subject | Differential amplifiers | en_US |
dc.subject | Indium Phosphide | en_US |
dc.subject | Heterojunction bipolar transistors | en_US |
dc.subject | Monolithic integrated circuits | en_US |
dc.subject | Silicon | en_US |
dc.title | A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Kazior, T.E. et al. “A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates.” Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International. 2009. 1113-1116. © 2009 Institute of Electrical and Electronics Engineers. | en_US |
dc.contributor.department | MIT Materials Research Laboratory | en_US |
dc.contributor.approver | Bulsara, Mayank | |
dc.contributor.mitauthor | Bulsara, Mayank | |
dc.contributor.mitauthor | Fitzgerald, Eugene A. | |
dc.relation.journal | IEEE MTT-S International Microwave Symposium Digest, 2009 MTT '09 | en_US |
dc.eprint.version | Final published version | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dspace.orderedauthors | Kazior, T.E.; LaRoche, J.R.; Lubyshev, D.; Fastenau, J. M.; Liu, W. K.; Urteaga, M.; Ha, W.; Bergman, J.; Choe, M. J.; Bulsara, M. T.; Fitzgerald, E. A.; Smith, D.; Clark, D.; Thompson, R.; Drazek, C.; Daval, N.; Benaissa, L.; Augendre, E. | en |
dc.identifier.orcid | https://orcid.org/0000-0002-1891-1959 | |
mit.license | PUBLISHER_POLICY | en_US |
mit.metadata.status | Complete | |