Impact of 〈110〉 uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors
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Alternative title
Impact of <110> uniaxial strain on n-channel In[subscript 0.15]Ga[subscript 0.85]Na high electron mobility transistorsa
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This letter reports on a study of the impact of 〈110〉 uniaxial strain on the characteristics of InGaAs high electron mobility transistors (HEMT) by bending GaAs chips up to a strain level of 0.4%. Systematic changes in the threshold voltage and intrinsic transconductance were observed. These changes can be well predicted by Schrödinger–Poisson simulations of the one-dimensional electrostatics of the device that include the piezoelectric effect, Schottky barrier height change, and sub-band quantization change due to strain. The effect of 〈110〉 strain on the device electrostatics emerges as a dominant effect over that of transport in the studied InGaAs HEMTs.
Date issued
2009-12Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology LaboratoriesJournal
Applied Physics Letters
Publisher
American Institute of Physics
Citation
Xia, Ling, and Jesus A. del Alamo. “Impact of <110> uniaxial strain on n-channel In[sub 0.15]Ga[sub 0.85]As high electron mobility transistors.” Applied Physics Letters 95.24 (2009): 243504. © 2009 American Institute of Physics
Version: Final published version
ISSN
1077-3118
0003-6951