| dc.contributor.author | del Alamo, Jesus A. | |
| dc.contributor.author | Xia, Ling | |
| dc.date.accessioned | 2010-10-21T18:13:52Z | |
| dc.date.available | 2010-10-21T18:13:52Z | |
| dc.date.issued | 2009-12 | |
| dc.date.submitted | 2009-10 | |
| dc.identifier.issn | 1077-3118 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.uri | http://hdl.handle.net/1721.1/59449 | |
| dc.description.abstract | This letter reports on a study of the impact of 〈110〉 uniaxial strain on the characteristics of InGaAs high electron mobility transistors (HEMT) by bending GaAs chips up to a strain level of 0.4%. Systematic changes in the threshold voltage and intrinsic transconductance were observed. These changes can be well predicted by Schrödinger–Poisson simulations of the one-dimensional electrostatics of the device that include the piezoelectric effect, Schottky barrier height change, and sub-band quantization change due to strain. The effect of 〈110〉 strain on the device electrostatics emerges as a dominant effect over that of transport in the studied InGaAs HEMTs. | en_US |
| dc.description.sponsorship | Intel Corporation | en_US |
| dc.description.sponsorship | Semiconductor Research Corporation. Center for Materials, Structures and Devices | en_US |
| dc.language.iso | en_US | |
| dc.publisher | American Institute of Physics | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1063/1.3273028 | en_US |
| dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
| dc.source | MIT web domain | en_US |
| dc.title | Impact of 〈110〉 uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors | en_US |
| dc.title.alternative | Impact of <110> uniaxial strain on n-channel In[subscript 0.15]Ga[subscript 0.85]Na high electron mobility transistorsa | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | Xia, Ling, and Jesus A. del Alamo. “Impact of <110> uniaxial strain on n-channel In[sub 0.15]Ga[sub 0.85]As high electron mobility transistors.” Applied Physics Letters 95.24 (2009): 243504. © 2009 American Institute of Physics | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Microsystems Technology Laboratories | en_US |
| dc.contributor.approver | del Alamo, Jesus A. | |
| dc.contributor.mitauthor | del Alamo, Jesus A. | |
| dc.contributor.mitauthor | Xia, Ling | |
| dc.relation.journal | Applied Physics Letters | en_US |
| dc.eprint.version | Final published version | en_US |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
| eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
| dspace.orderedauthors | Xia, Ling; del Alamo, Jesús A. | en |
| mit.license | PUBLISHER_POLICY | en_US |
| mit.metadata.status | Complete | |
