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Low-threshold terahertz quantum-cascade lasers with one-well injector operating up to 174 K

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Low-threshold terahertz quantum-cascade lasers with one-well injector operating up to 174 K

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Author: Kumar, Sushil; Hu, Qing; Reno, John L.
Department: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Research Laboratory of Electronics
Publisher: Institute of Electrical and Electronics Engineers
Date Issued: 2009-08
Abstract:
We report operation of v ~ 2.7 THz quantum-cascade lasers (QCLs) up to 174 K. A new three-well active region, one-well injector scheme is utilized to lower the operating current densities. While the temperature performance of this design is comparable to that of the best published THz QCLs, lower operating current densities make this design a viable alternative.
URI: http://hdl.handle.net/1721.1/59481
Other Identifiers: INSPEC Accession Number: 10842580
ISBN: 978-1-55752-869-8
Citation: Kumar, S., Qing Hu, and J.L. Reno. “Low-threshold Terahertz quantum-cascade lasers with one-well injector operating up to 174 K.” Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on. 2009. 1-2. ©2009 Institute of Electrical and Electronics Engineers.
Version: Final published version
Terms of Use: Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Journal: Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009.
Keywords: (140.3070) Infrared and far-infrared lasers, quantum cascade, (140.5965) Semiconductor lasers

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