| dc.contributor.author | Kumar, Sushil | |
| dc.contributor.author | Hu, Qing | |
| dc.contributor.author | Reno, John L. | |
| dc.date.accessioned | 2010-10-22T18:40:50Z | |
| dc.date.available | 2010-10-22T18:40:50Z | |
| dc.date.issued | 2009-08 | |
| dc.date.submitted | 2009-06 | |
| dc.identifier.isbn | 978-1-55752-869-8 | |
| dc.identifier.other | INSPEC Accession Number: 10842580 | |
| dc.identifier.uri | http://hdl.handle.net/1721.1/59481 | |
| dc.description.abstract | We report operation of v ~ 2.7 THz quantum-cascade lasers (QCLs) up to 174 K. A new three-well active region, one-well injector scheme is utilized to lower the operating current densities. While the temperature performance of this design is comparable to that of the best published THz QCLs, lower operating current densities make this design a viable alternative. | en_US |
| dc.description.sponsorship | National Science Foundation (U.S.) | en_US |
| dc.description.sponsorship | United States. National Aeronautics and Space Administration | en_US |
| dc.description.sponsorship | United States. Air Force Office of Scientific Research | en_US |
| dc.description.sponsorship | United States. Dept. of Energy (Contract DE-AC04-94AL85000) | en_US |
| dc.description.sponsorship | Sandia Corporation | en_US |
| dc.language.iso | en_US | |
| dc.publisher | Institute of Electrical and Electronics Engineers | en_US |
| dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
| dc.source | IEEE | en_US |
| dc.subject | (140.3070) Infrared and far-infrared lasers | en_US |
| dc.subject | quantum cascade | en_US |
| dc.subject | (140.5965) Semiconductor lasers | en_US |
| dc.title | Low-threshold terahertz quantum-cascade lasers with one-well injector operating up to 174 K | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | Kumar, S., Qing Hu, and J.L. Reno. “Low-threshold Terahertz quantum-cascade lasers with one-well injector operating up to 174 K.” Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on. 2009. 1-2. ©2009 Institute of Electrical and Electronics Engineers. | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Research Laboratory of Electronics | en_US |
| dc.contributor.approver | Hu, Qing | |
| dc.contributor.mitauthor | Kumar, Sushil | |
| dc.contributor.mitauthor | Hu, Qing | |
| dc.relation.journal | Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. | en_US |
| dc.eprint.version | Final published version | en_US |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
| eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
| dspace.orderedauthors | Kumar, Sushil; Hu, Qing; Reno, John L. | |
| dc.identifier.orcid | https://orcid.org/0000-0003-1982-4053 | |
| mit.license | PUBLISHER_POLICY | en_US |
| mit.metadata.status | Complete | |