Modeling frequency response of 65 nm CMOS RF power devices
Author(s)Gogineni, Usha; del Alamo, Jesus A.; Putnam, Christopher; Greenberg, David
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This paper presents a model for the frequency response of 65 nm RF power CMOS devices as a function of device width. We find that the cut-off frequency (f[subscript T]) and maximum oscillation frequency (f[subscript max]) decrease with increasing device width. Small-signal equivalent circuit extractions reveal that the main reason for the degradation in f[subscript T] and f[subscript max] is the presence of non-scalable parasitic resistances in the gate and drain of wide devices. Simplified expressions for f[subscript T] and f[subscript max] that include these parasitic effects have been derived and shown to be very accurate.
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Gogineni, Usha, et al. “Modeling frequency response of 65 nm CMOS RF power devices.”