Optical gain from the direct gap transition of Ge-on-Si at room temperature

Author(s)
Liu, Jifeng; Sun, Xiaochen; Kimerling, Lionel C.; Michel, Jurgen
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Abstract
We report direct band gap optical gain of tensile strained n+ epitaxial Ge-on-Si at room temperature, which confirms that band-engineered Ge-on-Si is a promising gain medium for monolithic optical amplifiers and lasers on Si.
Date issued
2009-09
URI
http://hdl.handle.net/1721.1/59838
Department
MIT Materials Research Laboratory; Massachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Microphotonics Center
Citation
Jifeng Liu et al. “Optical gain from the direct gap transition of Ge-on-Si at room temperature.” Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on. 2009. 262-264. © Copyright 2010 IEEE
Version: Final published version
Other identifiers
INSPEC Accession Number: 10978636
ISBN
978-1-4244-4402-1
ISSN
1949-2081
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