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dc.contributor.authorLiu, Jifeng
dc.contributor.authorSun, Xiaochen
dc.contributor.authorKimerling, Lionel C.
dc.contributor.authorMichel, Jurgen
dc.date.accessioned2010-11-05T18:55:48Z
dc.date.available2010-11-05T18:55:48Z
dc.date.issued2009-09
dc.date.submitted2009-09
dc.identifier.isbn978-1-4244-4402-1
dc.identifier.issn1949-2081
dc.identifier.otherINSPEC Accession Number: 10978636
dc.identifier.urihttp://hdl.handle.net/1721.1/59838
dc.description.abstractWe report direct band gap optical gain of tensile strained n+ epitaxial Ge-on-Si at room temperature, which confirms that band-engineered Ge-on-Si is a promising gain medium for monolithic optical amplifiers and lasers on Si.en_US
dc.description.sponsorshipMultidisciplinary University Research Initiative (MURI)(Si-based Laser Initiative)en_US
dc.description.sponsorshipUnited States. Air Force Office of Scientific Researchen_US
dc.language.isoen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/GROUP4.2009.5338364en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceIEEEen_US
dc.titleOptical gain from the direct gap transition of Ge-on-Si at room temperatureen_US
dc.typeArticleen_US
dc.identifier.citationJifeng Liu et al. “Optical gain from the direct gap transition of Ge-on-Si at room temperature.” Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on. 2009. 262-264. © Copyright 2010 IEEEen_US
dc.contributor.departmentMIT Materials Research Laboratoryen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microphotonics Centeren_US
dc.contributor.approverKimerling, Lionel C.
dc.contributor.mitauthorLiu, Jifeng
dc.contributor.mitauthorSun, Xiaochen
dc.contributor.mitauthorKimerling, Lionel C.
dc.contributor.mitauthorMichel, Jurgen
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsLiu, Jifeng; Sun, Xiaochen; Kimerling, Lionel C.; Michel, Jurgenen
dc.identifier.orcidhttps://orcid.org/0000-0002-3913-6189
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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