Low-temperature germanium ultra-high vacuum chemical vapor deposition for back-end photonic integration
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Polycrystalline germanium (poly-Ge) grown on amorphous Si (a-Si) by ultra-high vacuum chemical vapor deposition (UHVCVD) over oxide barriers at low temperatures (Tles450degC) exhibits a larger grain size and lower defect density than the as-grown poly-Ge next to the oxide barriers. Poly-Ge as deposited at 450degC is p-type, but the introduction of PH[subscript 3] during Ge deposition gives n-type poly-Ge with n = 2.1times10[superscript 18] cm[superscript -3]. The possible defect reduction and range of doping make poly-Ge a strong candidate for application to CMOS-compatible back-end photonic devices.
Date issued
2009-11Department
MIT Materials Research Laboratory; Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Department of Materials Science and EngineeringJournal
6th IEEE International Conference on Group IV Photonics, 2009. GFP '09
Publisher
Institute of Electrical and Electronics Engineers
Citation
McComber, K.A. et al. “Low-temperature germanium ultra-high vacuum chemical vapor deposition for back-end photonic integration.” Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on. 2009. 137-139. ©2009 IEEE.
Version: Final published version
Other identifiers
INSPEC Accession Number: 10978703
ISBN
978-1-4244-4402-1
ISSN
1949-2081