Low-temperature germanium ultra-high vacuum chemical vapor deposition for back-end photonic integration
Author(s)Kimerling, Lionel C.; McComber, Kevin A.; Lui, Jifeng; Michel, Jurgen
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Polycrystalline germanium (poly-Ge) grown on amorphous Si (a-Si) by ultra-high vacuum chemical vapor deposition (UHVCVD) over oxide barriers at low temperatures (Tles450degC) exhibits a larger grain size and lower defect density than the as-grown poly-Ge next to the oxide barriers. Poly-Ge as deposited at 450degC is p-type, but the introduction of PH[subscript 3] during Ge deposition gives n-type poly-Ge with n = 2.1times10[superscript 18] cm[superscript -3]. The possible defect reduction and range of doping make poly-Ge a strong candidate for application to CMOS-compatible back-end photonic devices.
DepartmentMIT Materials Research Laboratory; Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Department of Materials Science and Engineering
6th IEEE International Conference on Group IV Photonics, 2009. GFP '09
Institute of Electrical and Electronics Engineers
McComber, K.A. et al. “Low-temperature germanium ultra-high vacuum chemical vapor deposition for back-end photonic integration.” Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on. 2009. 137-139. ©2009 IEEE.
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INSPEC Accession Number: 10978703