MIT Libraries logoDSpace@MIT

MIT
View Item 
  • DSpace@MIT Home
  • MIT Open Access Articles
  • MIT Open Access Articles
  • View Item
  • DSpace@MIT Home
  • MIT Open Access Articles
  • MIT Open Access Articles
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

Dual Threshold Voltage Integrated Organic Technology for Ultralow-power Circuits

Author(s)
Sodini, Charles G.; Nausieda, Ivan A.; Ryu, Kevin K.; He, David Da; Akinwande, Akintunde Ibitayo; Bulovic, Vladimir; ... Show more Show less
Thumbnail
DownloadNausieda-2009-Dual Threshold Voltage Integrated Organic Technology for Ultralow-power Circuits.pdf (1.381Mb)
PUBLISHER_POLICY

Publisher Policy

Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.

Terms of use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Metadata
Show full item record
Abstract
For the first time, we demonstrate control of organic thinfilm transistor's (OTFT) threshold voltage (V [subscript T]) by modifying the gate work function. We present a near-room-temperature, fully lithographic process to fabricate integrated pentacene dual V [subscript T] OTFTs suitable for large-area and flexible mixed signal circuits. Platinum and aluminum are used as the gate metals for the high V [subscript T] (more depletion-like) and low V [subscript T] (more enhancement-like) p-channel devices, respectively. The availability of a high V [subscript T] device enables area-efficient zero-VGS current source loads. We demonstrate positive noise margin inverters which use pico Watts of power and a 3 V supply. Compared to a single V [subscript T] implementation, the dual V [subscript T] inverter occupies an area that is 30Ã Â smaller, and is 17Ã Â faster. These results show that p-channel only organic technologies can produce functional and low-power circuits without integrating a complementary device.
Date issued
2009-12
URI
http://hdl.handle.net/1721.1/60019
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology Laboratories
Journal
IEEE International Electron Devices Meeting
Publisher
Institute of Electrical and Electronics Engineers
Citation
Nausieda, I. et al. “Dual threshold voltage integrated organic technology for ultralow-power circuits.” Electron Devices Meeting (IEDM), 2009 IEEE International. 2009. 1-4. © 2009, IEEE
Version: Final published version
Other identifiers
E-ISBN: 978-1-4244-5640-6
INSPEC Accession Number: 11207408
ISBN
978-1-4244-5639-0

Collections
  • MIT Open Access Articles

Browse

All of DSpaceCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsThis CollectionBy Issue DateAuthorsTitlesSubjects

My Account

Login

Statistics

OA StatisticsStatistics by CountryStatistics by Department
MIT Libraries
PrivacyPermissionsAccessibilityContact us
MIT
Content created by the MIT Libraries, CC BY-NC unless otherwise noted. Notify us about copyright concerns.