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1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge

Author(s)
Yoon, Soon Fatt; Chen, Kah Pin; Ng, Tien Khee; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Lew, Kim Luong; Pitera, Arthur J.; Ringel, Steve A.; Carlin, Andrew M.; Gonzalez, Maria; Fitzgerald, Eugene A; ... Show more Show less
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Alternative title
1EV GaNxAs1-x-ySby material for lattice-matched III-V solar cell implementation on GaAs and Ge
Terms of use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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Abstract
The effect of different arsenic species (As[subscript 2] or As[subscript 4]) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p+n-n+ devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as the improvement in diode and solar cell characteristics in sample C, may suggest a successful defect density manipulation using As[subscript 2] overpressure for GaNAsSb growth.
Date issued
2010-02
URI
http://hdl.handle.net/1721.1/60058
Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering; Singapore-MIT Alliance in Research and Technology (SMART)
Journal
34th IEEE Photovoltaic Specialists Conference (PVSC), 2009
Publisher
Institute of Electrical and Electronics Engineers
Citation
Ng, T.K. et al. “1EV GANxAS1-x-ySBy material for lattice-matched III–V solar cell implementation on GaAs and Ge.” Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE. 2009. 000076-000080. © 2010 IEEE.
Version: Final published version
Other identifiers
INSPEC Accession Number: 11152112
ISBN
978-1-4244-2949-3
ISSN
0160-8371

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