1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge

Author(s)
Yoon, Soon Fatt; Chen, Kah Pin; Ng, Tien Khee; Tan, Kian Hua; Loke, Wan Khai; ... Show more
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1EV GaNxAs1-x-ySby material for lattice-matched III-V solar cell implementation on GaAs and Ge
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Abstract
The effect of different arsenic species (As[subscript 2] or As[subscript 4]) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p+n-n+ devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as the improvement in diode and solar cell characteristics in sample C, may suggest a successful defect density manipulation using As[subscript 2] overpressure for GaNAsSb growth.
Date issued
2010-02
URI
http://hdl.handle.net/1721.1/60058
Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering; Singapore-MIT Alliance in Research and Technology (SMART)
Journal
34th IEEE Photovoltaic Specialists Conference (PVSC), 2009
Publisher
Institute of Electrical and Electronics Engineers
Citation
Ng, T.K. et al. “1EV GANxAS1-x-ySBy material for lattice-matched III–V solar cell implementation on GaAs and Ge.” Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE. 2009. 000076-000080. © 2010 IEEE.
Version: Final published version
Other identifiers
INSPEC Accession Number: 11152112
ISBN
978-1-4244-2949-3
ISSN
0160-8371
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