1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Ge
Author(s)Yoon, Soon Fatt; Chen, Kah Pin; Ng, Tien Khee; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Lew, Kim Luong; Pitera, Arthur J.; Fitzgerald, Eugene A.; Ringel, Steve A.; Carlin, Andrew M.; Gonzalez, Maria; ... Show more Show less
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1EV GaNxAs1-x-ySby material for lattice-matched III-V solar cell implementation on GaAs and Ge
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The effect of different arsenic species (As[subscript 2] or As[subscript 4]) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p+n-n+ devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as the improvement in diode and solar cell characteristics in sample C, may suggest a successful defect density manipulation using As[subscript 2] overpressure for GaNAsSb growth.
DepartmentMassachusetts Institute of Technology. Department of Materials Science and Engineering; Singapore-MIT Alliance in Research and Technology (SMART)
34th IEEE Photovoltaic Specialists Conference (PVSC), 2009
Institute of Electrical and Electronics Engineers
Ng, T.K. et al. “1EV GANxAS1-x-ySBy material for lattice-matched III–V solar cell implementation on GaAs and Ge.” Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE. 2009. 000076-000080. © 2010 IEEE.
Final published version
INSPEC Accession Number: 11152112