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dc.contributor.authorYoon, Soon Fatt
dc.contributor.authorChen, Kah Pin
dc.contributor.authorNg, Tien Khee
dc.contributor.authorTan, Kian Hua
dc.contributor.authorLoke, Wan Khai
dc.contributor.authorWicaksono, Satrio
dc.contributor.authorLew, Kim Luong
dc.contributor.authorPitera, Arthur J.
dc.contributor.authorRingel, Steve A.
dc.contributor.authorCarlin, Andrew M.
dc.contributor.authorGonzalez, Maria
dc.contributor.authorFitzgerald, Eugene A
dc.date.accessioned2010-12-02T17:53:33Z
dc.date.available2010-12-02T17:53:33Z
dc.date.issued2010-02
dc.date.submitted2009-06
dc.identifier.isbn978-1-4244-2949-3
dc.identifier.issn0160-8371
dc.identifier.otherINSPEC Accession Number: 11152112
dc.identifier.urihttp://hdl.handle.net/1721.1/60058
dc.description.abstractThe effect of different arsenic species (As[subscript 2] or As[subscript 4]) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p+n-n+ devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as the improvement in diode and solar cell characteristics in sample C, may suggest a successful defect density manipulation using As[subscript 2] overpressure for GaNAsSb growth.en_US
dc.description.sponsorshipSingapore. National Research Foundationen_US
dc.description.sponsorshipSingapore. Economic Development Board (project ID NRF2007EWT-CERP01-0206)en_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/PVSC.2009.5411736en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceIEEEen_US
dc.title1EV GaN[subscript x]As[subscript 1-x-y]Sb[subscript y] material for lattice-matched III-V solar cell implementation on GaAs and Geen_US
dc.title.alternative1EV GaNxAs1-x-ySby material for lattice-matched III-V solar cell implementation on GaAs and Geen_US
dc.typeArticleen_US
dc.identifier.citationNg, T.K. et al. “1EV GANxAS1-x-ySBy material for lattice-matched III–V solar cell implementation on GaAs and Ge.” Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE. 2009. 000076-000080. © 2010 IEEE.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.departmentSingapore-MIT Alliance in Research and Technology (SMART)en_US
dc.contributor.approverFitzgerald, Eugene A.
dc.contributor.mitauthorYoon, Soon Fatt
dc.contributor.mitauthorChen, Kah Pin
dc.contributor.mitauthorPitera, Arthur J.
dc.contributor.mitauthorFitzgerald, Eugene A.
dc.relation.journal34th IEEE Photovoltaic Specialists Conference (PVSC), 2009en_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/ConferencePaperen_US
dspace.orderedauthorsNg, Tien Khee; Yoon, Soon Fatt; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Lew, Kim Luong; Chen, Kah Pin; Fitzgerald, Eugene A.; Pitera, Arthur J.; Ringel, Steve A.; Carlin, Andrew M.; Gonzalez, Mariaen
dc.identifier.orcidhttps://orcid.org/0000-0002-1891-1959
mit.licensePUBLISHER_POLICYen_US


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