Very-High-Frequency Resonant Boost Converters
Author(s)Perreault, David J.; Pilawa-Podgurski, Robert C. N.; Rivas, Juan M.; Sagneri, Anthony D.; Anderson, David I.
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This paper presents a resonant boost topology suitable for very-high-frequency (VHF, 30-300 MHz) DC-DC power conversion. The proposed design features low device voltage stress, high efficiency over a wide load range, and excellent transient performance. Two experimental prototypes have been built and evaluated. One is a 110-MHz, 23-W converter that uses a high-performance RF lateral DMOSFET. The converter achieves higher than 87% efficiency at nominal input and output voltages, and maintains good efficiency down to 5% of full load. The second implementation, aimed toward integration, is a 50-MHz, 17-W converter that uses a transistor from a 50-V integrated power process. In addition, two resonant gate drive schemes suitable for VHF operation are presented, both of which provide rapid startup and low-loss operation. Both converters regulate the output using high-bandwidth, on-off hysteretic control, which enables fast transient response and efficient light-load operation. The low energy storage requirements of the converters allow the use of aircore inductors in both designs, thereby eliminating magnetic core loss and introducing the possibility of easy integration.
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Laboratory for Electromagnetic and Electronic Systems
IEEE Transactions on Power Electronics
Institute of Electrical and Electronics Engineers
Pilawa-Podgurski, R. et al. “Very-High-Frequency Resonant Boost Converters.” Power Electronics, IEEE Transactions on 24.6 (2009): 1654-1665. ©2009 IEEE.
Final published version
INSPEC Accession Number: 10756704
1654 - 1665