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dc.contributor.authorPerreault, David J.
dc.contributor.authorPilawa-Podgurski, Robert C. N.
dc.contributor.authorRivas, Juan M.
dc.contributor.authorSagneri, Anthony D.
dc.contributor.authorAnderson, David I.
dc.date.accessioned2010-12-08T19:26:53Z
dc.date.available2010-12-08T19:26:53Z
dc.date.issued2009-06
dc.date.submitted2009-06
dc.identifier.issn1654 - 1665
dc.identifier.otherINSPEC Accession Number: 10756704
dc.identifier.urihttp://hdl.handle.net/1721.1/60235
dc.description.abstractThis paper presents a resonant boost topology suitable for very-high-frequency (VHF, 30-300 MHz) DC-DC power conversion. The proposed design features low device voltage stress, high efficiency over a wide load range, and excellent transient performance. Two experimental prototypes have been built and evaluated. One is a 110-MHz, 23-W converter that uses a high-performance RF lateral DMOSFET. The converter achieves higher than 87% efficiency at nominal input and output voltages, and maintains good efficiency down to 5% of full load. The second implementation, aimed toward integration, is a 50-MHz, 17-W converter that uses a transistor from a 50-V integrated power process. In addition, two resonant gate drive schemes suitable for VHF operation are presented, both of which provide rapid startup and low-loss operation. Both converters regulate the output using high-bandwidth, on-off hysteretic control, which enables fast transient response and efficient light-load operation. The low energy storage requirements of the converters allow the use of aircore inductors in both designs, thereby eliminating magnetic core loss and introducing the possibility of easy integration.en_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/tpel.2009.2016098en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceIEEEen_US
dc.titleVery-High-Frequency Resonant Boost Convertersen_US
dc.typeArticleen_US
dc.identifier.citationPilawa-Podgurski, R. et al. “Very-High-Frequency Resonant Boost Converters.” Power Electronics, IEEE Transactions on 24.6 (2009): 1654-1665. ©2009 IEEE.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Laboratory for Electromagnetic and Electronic Systemsen_US
dc.contributor.approverPerreault, David J.
dc.contributor.mitauthorPerreault, David J.
dc.contributor.mitauthorPilawa-Podgurski, Robert C. N.
dc.contributor.mitauthorSagneri, Anthony D.
dc.relation.journalIEEE Transactions on Power Electronicsen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsPilawa-Podgurski, Robert C. N.; Sagneri, Anthony D.; Rivas, Juan M.; Anderson, David I.; Perreault, David J.en
dc.identifier.orcidhttps://orcid.org/0000-0002-0746-6191
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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