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Experimental analysis of two measurement techniques to characterize photodiode linearity

Author(s)
Ramaswamy, Anand; Nunoya, Nobuhiro; Piels, Molly; Johansson, Leif A.; Coldren, Larry A.; Bowers, John E.; Hastings, Alexander S.; Williams, Keith J.; Klamkin, Jonathan; ... Show more Show less
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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Abstract
As photodiodes become more linear, accurately characterizing their linearity becomes very challenging. We compare the IMD3 results from a standard two tone measurement to those from a more complex three tone measurement technique. A Ge n-i-p waveguide photodetector on Silicon-on-Insulator (SOI) substrate is used for the comparison. Additionally, we analyze, via simulation, the limitations of the measurement system in determining the distortion of highly linear photodiodes.
Date issued
2009-12
URI
http://hdl.handle.net/1721.1/60287
Department
Lincoln Laboratory; Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Journal
International Topical Meeting on Microwave Photonics, 2009. MWP '09
Publisher
Institute of Electrical and Electronics Engineers
Citation
Ramaswamy, A. et al. “Experimental analysis of two measurement techniques to characterize photodiode linearity.” Microwave Photonics, 2009. MWP '09. International Topical Meeting on. 2009. 1-4. ©2009 IEEE.
Version: Final published version
Other identifiers
INSPEC Accession Number: 10999470
ISBN
978-1-4244-4788-6

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