Demonstration of a quantum logic gate in a cryogenic surface-electrode ion trap
Author(s)
Chuang, Isaac L.; Wang, Shannon Xuanyue; Labaziewicz, Jaroslaw; Ge, Yufei; Shewmon, Ruth
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We demonstrate quantum control techniques for a single trapped ion in a cryogenic, surface-electrode trap. A narrow optical transition of Sr[superscript +] along with the ground and first excited motional states of the harmonic trapping potential form a two-qubit system. The optical qubit transition is susceptible to magnetic field fluctuations, which we stabilize with a simple and compact method using superconducting rings. Decoherence of the motional qubit is suppressed by the cryogenic environment. ac Stark shift correction is accomplished by controlling the laser phase in the pulse sequencer, eliminating the need for an additional laser. Quantum process tomography is implemented on atomic and motional states by use of conditional pulse sequences. With these techniques, we demonstrate a Cirac-Zoller controlled-not gate in a single ion with a mean fidelity of 91(1)%.
Date issued
2010-06Department
Massachusetts Institute of Technology. Department of PhysicsJournal
Physical Review A
Publisher
American Physical Society
Citation
Wang, Shannon X. et al. “Demonstration of a quantum logic gate in a cryogenic surface-electrode ion trap.” Physical Review A 81.6 (2010): 062332. ©2010 The American Physical Society.
Version: Final published version
ISSN
1050-2947
1094-1622