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dc.contributor.authorChuang, Isaac L.
dc.contributor.authorWang, Shannon Xuanyue
dc.contributor.authorLabaziewicz, Jaroslaw
dc.contributor.authorGe, Yufei
dc.contributor.authorShewmon, Ruth
dc.date.accessioned2010-12-21T22:31:32Z
dc.date.available2010-12-21T22:31:32Z
dc.date.issued2010-06
dc.date.submitted2009-12
dc.identifier.issn1050-2947
dc.identifier.issn1094-1622
dc.identifier.urihttp://hdl.handle.net/1721.1/60354
dc.description.abstractWe demonstrate quantum control techniques for a single trapped ion in a cryogenic, surface-electrode trap. A narrow optical transition of Sr[superscript +] along with the ground and first excited motional states of the harmonic trapping potential form a two-qubit system. The optical qubit transition is susceptible to magnetic field fluctuations, which we stabilize with a simple and compact method using superconducting rings. Decoherence of the motional qubit is suppressed by the cryogenic environment. ac Stark shift correction is accomplished by controlling the laser phase in the pulse sequencer, eliminating the need for an additional laser. Quantum process tomography is implemented on atomic and motional states by use of conditional pulse sequences. With these techniques, we demonstrate a Cirac-Zoller controlled-not gate in a single ion with a mean fidelity of 91(1)%.en_US
dc.description.sponsorshipJapan. Ministry of Education, Culture, Sports, Science and Technologyen_US
dc.description.sponsorshipNational Science Foundation (U.S.). Center for Ultracold Atomsen_US
dc.description.sponsorshipUnited States. Intelligence Advanced Research Projects Activity. COMMIT Programen_US
dc.language.isoen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevA.81.062332en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleDemonstration of a quantum logic gate in a cryogenic surface-electrode ion trapen_US
dc.typeArticleen_US
dc.identifier.citationWang, Shannon X. et al. “Demonstration of a quantum logic gate in a cryogenic surface-electrode ion trap.” Physical Review A 81.6 (2010): 062332. ©2010 The American Physical Society.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.approverChuang, Isaac
dc.contributor.mitauthorChuang, Isaac L.
dc.contributor.mitauthorWang, Shannon Xuanyue
dc.contributor.mitauthorLabaziewicz, Jaroslaw
dc.contributor.mitauthorGe, Yufei
dc.contributor.mitauthorShewmon, Ruth
dc.relation.journalPhysical Review Aen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsWang, Shannon; Labaziewicz, Jaroslaw; Ge, Yufei; Shewmon, Ruth; Chuang, Isaacen
dc.identifier.orcidhttps://orcid.org/0000-0001-7296-523X
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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