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Understanding why the thinnest SiNx interface in transition-metal nitrides is stronger than the ideal bulk crystal

Author(s)
Zhang, R. F.; Argon, Ali Suphi; Veprek, S.
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Abstract
One-monolayer-thick SiNx interfacial layer in superhard nanocomposites, consisting of 3–4 nm size TiN nanocrystals joined by that layer, is stronger than a bulk SiNx crystal due to valence charge transfer from the metallic TiN, thus providing the nanocomposites with significant hardness enhancement. However, this enhancement is lost when the thickness of the interfacial SiN increases to ≥2 monolayers and the hardness decreases. We show that the softening of the nanocomposites with thicker SiNx interface is caused by the weakening of the TiN bonds close to that interface, that increases with increasing of the SiNx thickness. Other possible mechanisms of the softening are briefly discussed and ruled out. This finding may open up possible way of preparing new, even stronger superhard nanocomposites.
Date issued
2010-05
URI
http://hdl.handle.net/1721.1/60890
Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Journal
Physical Review B
Publisher
American Physical Society
Citation
Zhang, R.F., A.S. Argon, and S. Veprek. "Understanding why the thinnest SiNx interface in transition-metal nitrides is stronger than the ideal bulk crystal." Physical Review B 81.24 (2010): 245418. © 2010 by American Physical Society
Version: Final published version
ISSN
1098-0121
1550-235X

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