dc.contributor.author | Zhang, R. F. | |
dc.contributor.author | Argon, Ali Suphi | |
dc.contributor.author | Veprek, S. | |
dc.date.accessioned | 2011-02-04T13:05:05Z | |
dc.date.available | 2011-02-04T13:05:05Z | |
dc.date.issued | 2010-05 | |
dc.date.submitted | 2010-06 | |
dc.identifier.issn | 1098-0121 | |
dc.identifier.issn | 1550-235X | |
dc.identifier.uri | http://hdl.handle.net/1721.1/60890 | |
dc.description.abstract | One-monolayer-thick SiNx interfacial layer in superhard nanocomposites, consisting of 3–4 nm size TiN nanocrystals joined by that layer, is stronger than a bulk SiNx crystal due to valence charge transfer from the metallic TiN, thus providing the nanocomposites with significant hardness enhancement. However, this enhancement is lost when the thickness of the interfacial SiN increases to ≥2 monolayers and the hardness decreases. We show that the softening of the nanocomposites with thicker SiNx interface is caused by the weakening of the TiN bonds close to that interface, that increases with increasing of the SiNx thickness. Other possible mechanisms of the softening are briefly discussed and ruled out. This finding may open up possible way of preparing new, even stronger superhard nanocomposites. | en_US |
dc.description.sponsorship | Deutsche Forschungsgemeinschaft (DFG) | en_US |
dc.description.sponsorship | European Commission (NoE EXCELL under Contract No. 5157032) | en_US |
dc.language.iso | en_US | |
dc.publisher | American Physical Society | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1103/PhysRevB.81.245418 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | APS | en_US |
dc.title | Understanding why the thinnest SiNx interface in transition-metal nitrides is stronger than the ideal bulk crystal | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Zhang, R.F., A.S. Argon, and S. Veprek. "Understanding why the thinnest SiNx interface in transition-metal nitrides is stronger than the ideal bulk crystal." Physical Review B 81.24 (2010): 245418. © 2010 by American Physical Society | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Mechanical Engineering | en_US |
dc.contributor.approver | Argon, Ali Suphi | |
dc.contributor.mitauthor | Argon, Ali Suphi | |
dc.relation.journal | Physical Review B | en_US |
dc.eprint.version | Final published version | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dspace.orderedauthors | Zhang, R.; Argon, A.; Veprek, S. | en |
mit.license | PUBLISHER_POLICY | en_US |
mit.metadata.status | Complete | |