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dc.contributor.authorZhang, R. F.
dc.contributor.authorArgon, Ali Suphi
dc.contributor.authorVeprek, S.
dc.date.accessioned2011-02-04T13:05:05Z
dc.date.available2011-02-04T13:05:05Z
dc.date.issued2010-05
dc.date.submitted2010-06
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.urihttp://hdl.handle.net/1721.1/60890
dc.description.abstractOne-monolayer-thick SiNx interfacial layer in superhard nanocomposites, consisting of 3–4 nm size TiN nanocrystals joined by that layer, is stronger than a bulk SiNx crystal due to valence charge transfer from the metallic TiN, thus providing the nanocomposites with significant hardness enhancement. However, this enhancement is lost when the thickness of the interfacial SiN increases to ≥2 monolayers and the hardness decreases. We show that the softening of the nanocomposites with thicker SiNx interface is caused by the weakening of the TiN bonds close to that interface, that increases with increasing of the SiNx thickness. Other possible mechanisms of the softening are briefly discussed and ruled out. This finding may open up possible way of preparing new, even stronger superhard nanocomposites.en_US
dc.description.sponsorshipDeutsche Forschungsgemeinschaft (DFG)en_US
dc.description.sponsorshipEuropean Commission (NoE EXCELL under Contract No. 5157032)en_US
dc.language.isoen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.81.245418en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleUnderstanding why the thinnest SiNx interface in transition-metal nitrides is stronger than the ideal bulk crystalen_US
dc.typeArticleen_US
dc.identifier.citationZhang, R.F., A.S. Argon, and S. Veprek. "Understanding why the thinnest SiNx interface in transition-metal nitrides is stronger than the ideal bulk crystal." Physical Review B 81.24 (2010): 245418. © 2010 by American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.approverArgon, Ali Suphi
dc.contributor.mitauthorArgon, Ali Suphi
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsZhang, R.; Argon, A.; Veprek, S.en
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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