Toward a Germanium Laser for Integrated Silicon Photonics
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It has been demonstrated theoretically and experimentally that germanium, with proper strain engineering and n-type doping, can be an efficient light emitter and a gain medium at its direct bandgap within the third optical communication window ( ~1520-1620 nm). In this paper, we systematically discuss the effect of strain, doping, and temperature on the direct-gap optical gain in germanium. For electrically pumped devices, properties and design guidelines of Ge/Si heterojunction are also analyzed and compared with the results from fabricated Ge/Si heterojunction LEDs.
Date issued
2010-02Department
MIT Materials Research Laboratory; Massachusetts Institute of Technology. Department of Materials Science and Engineering; Massachusetts Institute of Technology. Microphotonics CenterJournal
IEEE Journal of Selected Topics in Quantum Electronics
Publisher
Institute of Electrical and Electronics Engineers
Citation
Kimerling, L.C., and J. Michel, with Xiaochen Sun and Jifeng Liu. “Toward a Germanium Laser for Integrated Silicon Photonics.” Selected Topics in Quantum Electronics, IEEE Journal Of 16.1 (2010) : 124-131. © 2010 IEEE.
Version: Final published version
Other identifiers
INSPEC Accession Number: 11105508
ISSN
1077-260X