| dc.contributor.author | Sun, Xiaochen | |
| dc.contributor.author | Liu, Jifeng | |
| dc.contributor.author | Kimerling, Lionel C. | |
| dc.contributor.author | Michel, Jurgen | |
| dc.date.accessioned | 2011-04-07T20:41:46Z | |
| dc.date.available | 2011-04-07T20:41:46Z | |
| dc.date.issued | 2010-02 | |
| dc.date.submitted | 2009-06 | |
| dc.identifier.issn | 1077-260X | |
| dc.identifier.other | INSPEC Accession Number: 11105508 | |
| dc.identifier.uri | http://hdl.handle.net/1721.1/62164 | |
| dc.description.abstract | It has been demonstrated theoretically and experimentally that germanium, with proper strain engineering and n-type doping, can be an efficient light emitter and a gain medium at its direct bandgap within the third optical communication window ( ~1520-1620 nm). In this paper, we systematically discuss the effect of strain, doping, and temperature on the direct-gap optical gain in germanium. For electrically pumped devices, properties and design guidelines of Ge/Si heterojunction are also analyzed and compared with the results from fabricated Ge/Si heterojunction LEDs. | en_US |
| dc.description.sponsorship | United States. Air Force Office of Scientific Research (Silicon-Based Laser Initiative of the Multidisciplinary University Research Initiative (MURI)) | en_US |
| dc.language.iso | en_US | |
| dc.publisher | Institute of Electrical and Electronics Engineers | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1109/jstqe.2009.2027445 | en_US |
| dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
| dc.source | IEEE | en_US |
| dc.title | Toward a Germanium Laser for Integrated Silicon Photonics | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | Kimerling, L.C., and J. Michel, with Xiaochen Sun and Jifeng Liu. “Toward a Germanium Laser for Integrated Silicon Photonics.” Selected Topics in Quantum Electronics, IEEE Journal Of 16.1 (2010) : 124-131. © 2010 IEEE. | en_US |
| dc.contributor.department | MIT Materials Research Laboratory | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Materials Science and Engineering | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Microphotonics Center | en_US |
| dc.contributor.approver | Kimerling, Lionel C. | |
| dc.contributor.mitauthor | Kimerling, Lionel C. | |
| dc.contributor.mitauthor | Liu, Jifeng | |
| dc.contributor.mitauthor | Sun, Xiaochen | |
| dc.contributor.mitauthor | Michel, Jurgen | |
| dc.relation.journal | IEEE Journal of Selected Topics in Quantum Electronics | en_US |
| dc.eprint.version | Final published version | en_US |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
| eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
| dspace.orderedauthors | Xiaochen Sun; Jifeng Liu; Kimerling, L.C.; Michel, J. | en |
| dc.identifier.orcid | https://orcid.org/0000-0002-3913-6189 | |
| mit.license | PUBLISHER_POLICY | en_US |
| mit.metadata.status | Complete | |
