Operation and Optimization of Silicon-Diode-Based Optical Modulators

Author(s)
Spector, Steven Jay; Sorace, Cheryl M.; Geis, Michael W.; Grein, Matthew E.; Yoon, Jung Uk; ... Show more
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Abstract
An optical modulator in silicon based on a diode structure has been operated in both forward and reverse bias. This modulator achieves near state-of-the-art performance in both modes, thereby making this device ideal for comparing the two modes of operation. In reverse bias, the device has a VπL [V subscript pi L] of 4.0 V·cm and a bandwidth of 26 GHz. In forward bias, the device is very sensitive, a VπL [V subscript pi L] as low as 0.0025 V·cm has been achieved, but the bandwidth is only 100 MHz. A new geometry for a reverse-bias device is proposed, and it is predicted to achieve a VπL [V subscript pi L] of 0.5 V·cm.
Date issued
2010-02
URI
http://hdl.handle.net/1721.1/62220
Department
Lincoln Laboratory; Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Journal
IEEE journal of selected topics in quantum electronics
Publisher
Institute of Electrical and Electronics Engineers
Citation
Spector, S.J. et al. “Operation and Optimization of Silicon-Diode-Based Optical Modulators.” Selected Topics in Quantum Electronics, IEEE Journal Of 16.1 (2010) : 165-172. © 2010 IEEE
Version: Final published version
Other identifiers
INSPEC Accession Number: 11105496
ISSN
1077-260X
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