| dc.contributor.author | Spector, Steven Jay | |
| dc.contributor.author | Sorace, Cheryl M. | |
| dc.contributor.author | Geis, Michael W. | |
| dc.contributor.author | Grein, Matthew E. | |
| dc.contributor.author | Yoon, Jung Uk | |
| dc.contributor.author | Lyszczarz, Theodore M. | |
| dc.contributor.author | Ippen, Erich P. | |
| dc.contributor.author | Kaertner, Franz X. | |
| dc.date.accessioned | 2011-04-15T22:10:34Z | |
| dc.date.available | 2011-04-15T22:10:34Z | |
| dc.date.issued | 2010-02 | |
| dc.date.submitted | 2009-07 | |
| dc.identifier.issn | 1077-260X | |
| dc.identifier.other | INSPEC Accession Number: 11105496 | |
| dc.identifier.uri | http://hdl.handle.net/1721.1/62220 | |
| dc.description.abstract | An optical modulator in silicon based on a diode structure
has been operated in both forward and reverse bias. This modulator
achieves near state-of-the-art performance in both modes,
thereby making this device ideal for comparing the two modes of
operation. In reverse bias, the device has a VπL [V subscript pi L] of 4.0 V·cm and a
bandwidth of 26 GHz. In forward bias, the device is very sensitive,
a VπL [V subscript pi L] as low as 0.0025 V·cm has been achieved, but the bandwidth
is only 100 MHz. A new geometry for a reverse-bias device
is proposed, and it is predicted to achieve a VπL [V subscript pi L] of 0.5 V·cm. | en_US |
| dc.description.sponsorship | United States. Defense Advanced Research Projects Agency. Electronic and Photonic Integrated Circuit (EPIC) Program (Air Force Contract FA8721-05-C-0002) (Contract W911NF-04-1-0431) | en_US |
| dc.description.sponsorship | National Science Foundation (U.S.) | en_US |
| dc.description.sponsorship | Ida M. Green Fellowship | en_US |
| dc.language.iso | en_US | |
| dc.publisher | Institute of Electrical and Electronics Engineers | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1109/jstqe.2009.2027817 | en_US |
| dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
| dc.source | IEEE | en_US |
| dc.title | Operation and Optimization of Silicon-Diode-Based Optical Modulators | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | Spector, S.J. et al. “Operation and Optimization of Silicon-Diode-Based Optical Modulators.” Selected Topics in Quantum Electronics, IEEE Journal Of 16.1 (2010) : 165-172. © 2010 IEEE | en_US |
| dc.contributor.department | Lincoln Laboratory | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
| dc.contributor.approver | Kaertner, Franz X. | |
| dc.contributor.mitauthor | Spector, Steven Jay | |
| dc.contributor.mitauthor | Sorace, Cheryl M. | |
| dc.contributor.mitauthor | Geis, Michael W. | |
| dc.contributor.mitauthor | Grein, Matthew E. | |
| dc.contributor.mitauthor | Yoon, Jung Uk | |
| dc.contributor.mitauthor | Lyszczarz, Theodore M. | |
| dc.contributor.mitauthor | Ippen, Erich P. | |
| dc.contributor.mitauthor | Kaertner, Franz X. | |
| dc.relation.journal | IEEE journal of selected topics in quantum electronics | en_US |
| dc.eprint.version | Final published version | en_US |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
| eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
| dspace.orderedauthors | Spector, S.J.; Sorace, C.M.; Geis, M.W.; Grein, M.E.; Yoon, J.U.; Lyszczarz, T.M.; Ippen, E.P.; Kartner, F.X. | en |
| dc.identifier.orcid | https://orcid.org/0000-0002-8733-2555 | |
| dc.identifier.orcid | https://orcid.org/0000-0002-6032-8636 | |
| mit.license | PUBLISHER_POLICY | en_US |
| mit.metadata.status | Complete | |
