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Nanoelectronics challenges for the 21st century

Author(s)
Antoniadis, Dimitri A.
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Alternative title
Keynote 1: Nanoelectronics Challenges for the 21st Century
Terms of use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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Abstract
Leading edge CMOS technologies today are unique examples of nanoscale engineering at an industrial scale. As we celebrate this remarkable achievement of our industry that forms the ever-expanding technology basis of modern society we cannot help but ponder the question of how we can continue to push the envelope of nanoelectronics. With the end of Si FET scaling appearing increasingly near, searching for more scalable transistor structures in Si and in “beyond-Si” solutions has become imperative; from relatively “easy” transitions to nonplanar Si structures, to the incorporation of high mobility semiconductors, like Ge and III-V’s, to even higher mobility new materials such as carbon nanotubes, graphene, or other molecular structures. And even further, there are searches for new information representation and processing concepts beyond charge in FETs, as for example, in spin-state devices. Of course, declaring silicon dead is premature at best, and with this in mind I will discuss the challenges and possible scenaria for the introduction of novel nano-electronic devices.
Date issued
2010-01
URI
http://hdl.handle.net/1721.1/62551
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Journal
Proceedings of the 23rd International Conference on VLSI Design, 2010
Publisher
Institute of Electrical and Electronics Engineers
Citation
Antoniadis, Dimitri A. “Keynote 1: Nanoelectronics Challenges for the 21st Century.” Proceedings of the 23rd International Conference on VLSI Design, 2010. VLSID ’10. p. xxx. © 2010 IEEE.
Version: Final published version
ISBN
978-1-4244-5541-6
ISSN
1063-9667

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