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dc.contributor.authorAntoniadis, Dimitri A.
dc.date.accessioned2011-04-28T18:40:36Z
dc.date.available2011-04-28T18:40:36Z
dc.date.issued2010-01
dc.identifier.isbn978-1-4244-5541-6
dc.identifier.issn1063-9667
dc.identifier.urihttp://hdl.handle.net/1721.1/62551
dc.description.abstractLeading edge CMOS technologies today are unique examples of nanoscale engineering at an industrial scale. As we celebrate this remarkable achievement of our industry that forms the ever-expanding technology basis of modern society we cannot help but ponder the question of how we can continue to push the envelope of nanoelectronics. With the end of Si FET scaling appearing increasingly near, searching for more scalable transistor structures in Si and in “beyond-Si” solutions has become imperative; from relatively “easy” transitions to nonplanar Si structures, to the incorporation of high mobility semiconductors, like Ge and III-V’s, to even higher mobility new materials such as carbon nanotubes, graphene, or other molecular structures. And even further, there are searches for new information representation and processing concepts beyond charge in FETs, as for example, in spin-state devices. Of course, declaring silicon dead is premature at best, and with this in mind I will discuss the challenges and possible scenaria for the introduction of novel nano-electronic devices.en_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/VLSI.Design.2010.94en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceIEEEen_US
dc.titleNanoelectronics challenges for the 21st centuryen_US
dc.title.alternativeKeynote 1: Nanoelectronics Challenges for the 21st Centuryen_US
dc.typeArticleen_US
dc.identifier.citationAntoniadis, Dimitri A. “Keynote 1: Nanoelectronics Challenges for the 21st Century.” Proceedings of the 23rd International Conference on VLSI Design, 2010. VLSID ’10. p. xxx. © 2010 IEEE.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.approverAntoniadis, Dimitri A.
dc.contributor.mitauthorAntoniadis, Dimitri A.
dc.relation.journalProceedings of the 23rd International Conference on VLSI Design, 2010en_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/ConferencePaperen_US
dspace.orderedauthorsAntoniadis, Dimitri A.
dc.identifier.orcidhttps://orcid.org/0000-0002-4836-6525
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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