Determination of substrate pinning in epitaxial and supported graphene layers via Raman scattering
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Ferralis-2011-Determination of sub.pdf
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Author(s)
Ferralis, Nicola
Maboudian, Roya
Carraro, Carlo
Date Issued
February 2011
Journal
Physical Review B
Publisher
American Physical Society
Citation
Ferralis, Nicola, Roya Maboudian, and Carlo Carraro. “Determination of Substrate Pinning in Epitaxial and Supported Graphene Layers via Raman Scattering.” Physical Review B 83.8 (2011) : 081410. ©2011 American Physical Society
Version
Final published version
Abstract
The temperature-induced shift of the Raman G line in epitaxial graphene on SiC and Ni surfaces, as well as in graphene supported on SiO[subscript 2], is investigated with Raman spectroscopy. The thermal shift rate of epitaxial graphene on 6H-SiC(0001) is found to be about three times that of freestanding graphene. This result is explained quantitatively as a consequence of pinning by the substrate. In contrast, graphene grown on polycrystalline Ni films is shown to be unpinned, i.e., to behave elastically as freestanding, despite the relatively strong interaction with the metal substrate. Moreover, it is shown that the transfer of exfoliated graphene layers onto a supporting substrate can result in pinned or unpinned layers, depending on the transfer protocol.
MIT Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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DOI of Published Version
https://doi.org/10.1103/PhysRevB.83.081410
