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dc.contributor.authorFerralis, Nicola
dc.contributor.authorMaboudian, Roya
dc.contributor.authorCarraro, Carlo
dc.date.accessioned2011-05-19T13:31:11Z
dc.date.available2011-05-19T13:31:11Z
dc.date.issued2011-02
dc.date.submitted2011-01
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.urihttp://hdl.handle.net/1721.1/62841
dc.description.abstractThe temperature-induced shift of the Raman G line in epitaxial graphene on SiC and Ni surfaces, as well as in graphene supported on SiO[subscript 2], is investigated with Raman spectroscopy. The thermal shift rate of epitaxial graphene on 6H-SiC(0001) is found to be about three times that of freestanding graphene. This result is explained quantitatively as a consequence of pinning by the substrate. In contrast, graphene grown on polycrystalline Ni films is shown to be unpinned, i.e., to behave elastically as freestanding, despite the relatively strong interaction with the metal substrate. Moreover, it is shown that the transfer of exfoliated graphene layers onto a supporting substrate can result in pinned or unpinned layers, depending on the transfer protocol.en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (EEC-0832819)en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (CMMI-0825531)en_US
dc.description.sponsorshipUnited States. Defense Advanced Research Projects Agency (DARPA). Microsystems Technology Officeen_US
dc.language.isoen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.83.081410en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleDetermination of substrate pinning in epitaxial and supported graphene layers via Raman scatteringen_US
dc.typeArticleen_US
dc.identifier.citationFerralis, Nicola, Roya Maboudian, and Carlo Carraro. “Determination of Substrate Pinning in Epitaxial and Supported Graphene Layers via Raman Scattering.” Physical Review B 83.8 (2011) : 081410. ©2011 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.approverFerralis, Nicola
dc.contributor.mitauthorFerralis, Nicola
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsFerralis, Nicola; Maboudian, Roya; Carraro, Carloen
dc.identifier.orcidhttps://orcid.org/0000-0003-4148-2424
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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