dc.contributor.author | Szkopek, Thomas | |
dc.contributor.author | Roychowdhury, Vwani P. | |
dc.contributor.author | Antoniadis, Dimitri A. | |
dc.contributor.author | Damoulakis, John N. | |
dc.date.accessioned | 2011-10-03T20:03:23Z | |
dc.date.available | 2011-10-03T20:03:23Z | |
dc.date.issued | 2011-04 | |
dc.date.submitted | 2011-01 | |
dc.identifier.issn | 0031-9007 | |
dc.identifier.uri | http://hdl.handle.net/1721.1/66166 | |
dc.description.abstract | The error rate in complementary transistor circuits is suppressed exponentially in electron number, arising from an intrinsic physical implementation of fault-tolerant error correction. Contrariwise, explicit assembly of gates into the most efficient known fault-tolerant architecture is characterized by a subexponential suppression of error rate with electron number, and incurs significant overhead in wiring and complexity. We conclude that it is more efficient to prevent logical errors with physical fault tolerance than to correct logical errors with fault-tolerant architecture. | en_US |
dc.language.iso | en_US | |
dc.publisher | American Physical Society | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1103/PhysRevLett.106.176801 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | APS | en_US |
dc.title | Physical Fault Tolerance of Nanoelectronics | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Szkopek, Thomas et al. “Physical Fault Tolerance of Nanoelectronics.” Physical Review Letters 106 (2011). © 2011 American Physical Society. | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
dc.contributor.approver | Antoniadis, Dimitri A. | |
dc.contributor.mitauthor | Antoniadis, Dimitri A. | |
dc.relation.journal | Physical Review Letters | en_US |
dc.eprint.version | Final published version | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dspace.orderedauthors | Szkopek, Thomas; Roychowdhury, Vwani; Antoniadis, Dimitri; Damoulakis, John | en |
dc.identifier.orcid | https://orcid.org/0000-0002-4836-6525 | |
mit.license | PUBLISHER_POLICY | en_US |
mit.metadata.status | Complete | |