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dc.contributor.authorSzkopek, Thomas
dc.contributor.authorRoychowdhury, Vwani P.
dc.contributor.authorAntoniadis, Dimitri A.
dc.contributor.authorDamoulakis, John N.
dc.date.accessioned2011-10-03T20:03:23Z
dc.date.available2011-10-03T20:03:23Z
dc.date.issued2011-04
dc.date.submitted2011-01
dc.identifier.issn0031-9007
dc.identifier.urihttp://hdl.handle.net/1721.1/66166
dc.description.abstractThe error rate in complementary transistor circuits is suppressed exponentially in electron number, arising from an intrinsic physical implementation of fault-tolerant error correction. Contrariwise, explicit assembly of gates into the most efficient known fault-tolerant architecture is characterized by a subexponential suppression of error rate with electron number, and incurs significant overhead in wiring and complexity. We conclude that it is more efficient to prevent logical errors with physical fault tolerance than to correct logical errors with fault-tolerant architecture.en_US
dc.language.isoen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevLett.106.176801en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titlePhysical Fault Tolerance of Nanoelectronicsen_US
dc.typeArticleen_US
dc.identifier.citationSzkopek, Thomas et al. “Physical Fault Tolerance of Nanoelectronics.” Physical Review Letters 106 (2011). © 2011 American Physical Society.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.approverAntoniadis, Dimitri A.
dc.contributor.mitauthorAntoniadis, Dimitri A.
dc.relation.journalPhysical Review Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsSzkopek, Thomas; Roychowdhury, Vwani; Antoniadis, Dimitri; Damoulakis, Johnen
dc.identifier.orcidhttps://orcid.org/0000-0002-4836-6525
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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