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dc.contributor.authorMacLean, Kenneth
dc.contributor.authorMentzel, Tamar
dc.contributor.authorKastner, Marc
dc.date.accessioned2011-12-15T14:01:40Z
dc.date.available2011-12-15T14:01:40Z
dc.date.issued2010-12
dc.identifier.issn1530-6984
dc.identifier.urihttp://hdl.handle.net/1721.1/67690
dc.description.abstractWe investigate the effect of electrostatic screening on a nanoscale silicon MOSFET electrometer. We find that screening by the lightly doped p-type substrate, on which the MOSFET is fabricated, significantly affects the sensitivity of the device. We are able to tune the rate and magnitude of the screening effect by varying the temperature and the voltages applied to the device, respectively. We show that despite this screening effect, the electrometer is still very sensitive to its electrostatic environment, even at room temperature.en_US
dc.description.sponsorshipUnited States. Dept. of Energy (award DE-FG02-08ER46515)en_US
dc.description.sponsorshipUnited States. Army Research Office (contract W911NF-07-D-0004)en_US
dc.language.isoen_US
dc.publisherAmerican Chemical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1021/nl102121een_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceProf. Kastner via Mat Willmotten_US
dc.titleThe Effect of Electrostatic Screening on a Nanometer Scale Electrometeren_US
dc.typeArticleen_US
dc.identifier.citationMacLean, Kenneth, Tamar S. Mentzel, and Marc A. Kastner. “The Effect of Electrostatic Screening on a Nanometer Scale Electrometer.” Nano Letters 11.1 (2011): 30-34.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.approverKastner, Marc
dc.contributor.mitauthorMacLean, Kenneth
dc.contributor.mitauthorMentzel, Tamar
dc.contributor.mitauthorKastner, Marc
dc.relation.journalNano Lettersen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsMacLean, Kenneth; Mentzel, Tamar S.; Kastner, Marc A.en
dc.identifier.orcidhttps://orcid.org/0000-0001-7641-5438
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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