Measuring Charge Transport in a Thin Solid Film Using Charge Sensing
Author(s)MacLean, Kenneth; Mentzel, Tamar; Kastner, Marc
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We measure charge transport in a hydrogenated amorphous silicon (a-Si:H) thin film using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances even in the presence of blocking contacts. At high temperatures, where the resistance of the a-Si:H is not too large, the charge detection measurement agrees with a direct measurement of current. The device geometry allows us to probe both the field effect and dispersive transport in the a-Si:H using charge sensing and to extract the density of states near the Fermi energy.
DepartmentMassachusetts Institute of Technology. Department of Physics
American Chemical Society
MacLean, Kenneth, Tamar S. Mentzel, and Marc A. Kastner. “Measuring Charge Transport in a Thin Solid Film Using Charge Sensing.” Nano Letters 10.3 (2010): 1037-1040.
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