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dc.contributor.authorClem, John R.
dc.contributor.authorBerggren, Karl K.
dc.date.accessioned2012-03-22T15:36:18Z
dc.date.available2012-03-22T15:36:18Z
dc.date.issued2011-11
dc.date.submitted2011-11
dc.identifier.issn1098-0121
dc.identifier.issn1550-235X
dc.identifier.urihttp://hdl.handle.net/1721.1/69832
dc.description.abstractIn this paper, we calculate the critical currents in thin superconducting strips with sharp right-angle turns, 180∘ turnarounds, and more complicated geometries, where all the line widths are much smaller than the Pearl length Λ=2λ2/d. We define the critical current as the current that reduces the Gibbs-free-energy barrier to zero. We show that current crowding, which occurs whenever the current rounds a sharp turn, tends to reduce the critical current, but we also show that when the radius of curvature is less than the coherence length, this effect is partially compensated by a radius-of-curvature effect. We propose several patterns with rounded corners to avoid critical-current reduction due to current crowding. These results are relevant to superconducting nanowire single-photon detectors, where they suggest a means of improving the bias conditions and reducing dark counts. These results also have relevance to normal-metal nanocircuits, as these patterns can reduce the electrical resistance, electromigration, and hot spots caused by nonuniform heating.en_US
dc.language.isoen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevB.84.174510en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleGeometry-dependent critical currents in superconducting nanocircuitsen_US
dc.typeArticleen_US
dc.identifier.citationClem, John, and Karl Berggren. “Geometry-dependent Critical Currents in Superconducting Nanocircuits.” Physical Review B 84.17 (2011): [27 pages].en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.approverBerggren, Karl K.
dc.contributor.mitauthorBerggren, Karl K.
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsClem, John; Berggren, Karlen
dc.identifier.orcidhttps://orcid.org/0000-0001-7453-9031
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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