High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor
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In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown voltage. The device utilizes an integrated gate structure with a short gate controlling the threshold voltage and a long gate supporting the high-voltage drop from the drain. Using this new dual-gate technology, AlGaN/GaN E-mode transistors grown on a Si substrate have demonstrated a high threshold voltage of 2.9 V with a maximum drain current of 434 mA/mm and a specific on-resistance of 4.3 m Ω·cm2 at a breakdown voltage of 643 V.
Date issued
2010-06Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer ScienceJournal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers
Citation
Lu, Bin, Omair Irfan Saadat, and Tomás Palacios. “High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor.” IEEE Electron Device Letters 31.9 (2010): 990–992. Web. © 2010 IEEE.
Version: Final published version
Other identifiers
INSPEC Accession Number: 11477383
ISSN
0741-3106
1558-0563