Low-Swing Signaling on Monolithically Integrated Global Graphene Interconnects
Author(s)Lee, Kyeong-Jae; Qazi, Masood; Kong, Jing; Chandrakasan, Anantha P.
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In this paper, we characterize the performance of monolithically integrated graphene interconnects on a prototype 0.35-μm CMOS chip. The test chip implements an array of transmitter/receivers to analyze the end-to-end data communication on graphene wires. Large-area graphene sheets are first grown by chemical vapor deposition, which are then subsequently processed into narrow wires up to 1 mm in length. A low-swing signaling technique is applied, which results in a transmitter energy of 0.3-0.7 pJ/b·mm[superscript -1] and a total energy of 2.4-5.2 pJ/b·mm[superscript -1]. Bit error rates below 2 × 10[superscript -10] are measured using a 2[superscript 31] - 1 pseudorandom binary sequence. Minimum voltage swings of 100 mV at 1.5-V supply and 500 mV at 3.3-V supply have also been demonstrated. At present, the graphene wire is largely limited by its growth quality and high sheet resistance.
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
IEEE Transactions on Electron Devices
Institute of Electrical and Electronics Engineers
Lee, Kyeong-Jae et al. “Low-Swing Signaling on Monolithically Integrated Global Graphene Interconnects.” IEEE Transactions on Electron Devices 57.12 (2010): 3418–3425. Web.© 2010 IEEE.
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