Design and Fabrication of DRIE-Patterned Complex Needlelike Silicon Structures
Author(s)Gassend, Blaise; Velasquez-Garcia, Luis Fernando; Akinwande, Akintunde Ibitayo
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This paper reports the design and fabrication of high-aspect-ratio needlelike silicon structures that can have complex geometry. The structures are hundreds of micrometers tall with submicrometer-sharp protrusions, and they are fabricated using a series of passivated and unpassivated deep reactive-ion etching (DRIE) steps. A simple model is presented to predict the geometry of the structure based on the etch mask and the etch sequence. Model predictions are in good qualitative agreement with fabrication results, making it a useful design tool. The model is compared with literature reports on tapered DRIE.
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology Laboratories
Journal of Microelectromechanical Systems
Institute of Electrical and Electronics Engineers
Gassend, Blaise Laurent Patrick, Luis Fernando Velasquez-Garcia, and Akintunde Ibitayo Akinwande. “Design and Fabrication of DRIE-Patterned Complex Needlelike Silicon Structures.” Journal of Microelectromechanical Systems 19.3 (2010): 589–598. Web.© 2010 IEEE.
Final published version
INSPEC Accession Number: 11328192