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dc.contributor.authorGassend, Blaise
dc.contributor.authorVelasquez-Garcia, Luis Fernando
dc.contributor.authorAkinwande, Akintunde Ibitayo
dc.date.accessioned2012-05-24T20:02:22Z
dc.date.available2012-05-24T20:02:22Z
dc.date.issued2010-06
dc.date.submitted2009-10
dc.identifier.issn1057-7157
dc.identifier.otherINSPEC Accession Number: 11328192
dc.identifier.urihttp://hdl.handle.net/1721.1/70936
dc.description.abstractThis paper reports the design and fabrication of high-aspect-ratio needlelike silicon structures that can have complex geometry. The structures are hundreds of micrometers tall with submicrometer-sharp protrusions, and they are fabricated using a series of passivated and unpassivated deep reactive-ion etching (DRIE) steps. A simple model is presented to predict the geometry of the structure based on the etch mask and the etch sequence. Model predictions are in good qualitative agreement with fabrication results, making it a useful design tool. The model is compared with literature reports on tapered DRIE.en_US
dc.description.sponsorshipUnited States. National Aeronautics and Space Administration (Space and Naval Warfare Systems Center Award N66001-04-1-8925)en_US
dc.description.sponsorshipSpace and Naval Warfare Systems Center San Diego (U.S.) (Award N66001-04-1-8925)en_US
dc.description.sponsorshipUnited States. Army (Soldiers Systems Command Award W911QY-05-1-0002)en_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/JMEMS.2010.2042680en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceIEEEen_US
dc.titleDesign and Fabrication of DRIE-Patterned Complex Needlelike Silicon Structuresen_US
dc.typeArticleen_US
dc.identifier.citationGassend, Blaise Laurent Patrick, Luis Fernando Velasquez-Garcia, and Akintunde Ibitayo Akinwande. “Design and Fabrication of DRIE-Patterned Complex Needlelike Silicon Structures.” Journal of Microelectromechanical Systems 19.3 (2010): 589–598. Web.© 2010 IEEE.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratoriesen_US
dc.contributor.approverAkinwande, Akintunde Ibitayo
dc.contributor.mitauthorGassend, Blaise
dc.contributor.mitauthorVelasquez-Garcia, Luis Fernando
dc.contributor.mitauthorAkinwande, Akintunde Ibitayo
dc.relation.journalJournal of Microelectromechanical Systemsen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsGassend, Blaise Laurent Patrick; Velasquez-Garcia, Luis Fernando; Akinwande, Akintunde Ibitayoen
dc.identifier.orcidhttps://orcid.org/0000-0003-3001-9223
dspace.mitauthor.errortrue
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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