Quantum Hall Effect, Screening, and Layer-Polarized Insulating States in Twisted Bilayer Graphene
Author(s)
Sanchez-Yamagishi, Javier D.; Taychatanapat, Thiti; Watanabe, Kenji; Taniguchi, Takashi; Yacoby, Amir; Jarillo-Herrero, Pablo; ... Show more Show less
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We investigate electronic transport in dual-gated twisted-bilayer graphene. Despite the subnanometer proximity between the layers, we identify independent contributions to the magnetoresistance from the graphene Landau level spectrum of each layer. We demonstrate that the filling factor of each layer can be independently controlled via the dual gates, which we use to induce Landau level crossings between the layers. By analyzing the gate dependence of the Landau level crossings, we characterize the finite interlayer screening and extract the capacitance between the atomically spaced layers. At zero filling factor, we observe an insulating state at large displacement fields, which can be explained by the presence of counterpropagating edge states with interlayer coupling.
Date issued
2012-02Department
Massachusetts Institute of Technology. Department of PhysicsJournal
Physical Review Letters
Publisher
American Physical Society
Citation
Sanchez-Yamagishi, Javier et al. “Quantum Hall Effect, Screening, and Layer-Polarized Insulating States in Twisted Bilayer Graphene.” Physical Review Letters 108.7 (2012). © 2012 American Physical Society
Version: Final published version
ISSN
0031-9007
1079-7114