dc.contributor.author | Sanchez-Yamagishi, Javier D. | |
dc.contributor.author | Taychatanapat, Thiti | |
dc.contributor.author | Watanabe, Kenji | |
dc.contributor.author | Taniguchi, Takashi | |
dc.contributor.author | Yacoby, Amir | |
dc.contributor.author | Jarillo-Herrero, Pablo | |
dc.date.accessioned | 2012-07-06T13:34:54Z | |
dc.date.available | 2012-07-06T13:34:54Z | |
dc.date.issued | 2012-02 | |
dc.date.submitted | 2011-10 | |
dc.identifier.issn | 0031-9007 | |
dc.identifier.issn | 1079-7114 | |
dc.identifier.uri | http://hdl.handle.net/1721.1/71541 | |
dc.description.abstract | We investigate electronic transport in dual-gated twisted-bilayer graphene. Despite the subnanometer proximity between the layers, we identify independent contributions to the magnetoresistance from the graphene Landau level spectrum of each layer. We demonstrate that the filling factor of each layer can be independently controlled via the dual gates, which we use to induce Landau level crossings between the layers. By analyzing the gate dependence of the Landau level crossings, we characterize the finite interlayer screening and extract the capacitance between the atomically spaced layers. At zero filling factor, we observe an insulating state at large displacement fields, which can be explained by the presence of counterpropagating edge states with interlayer coupling. | en_US |
dc.description.sponsorship | United States. Dept. of Energy. Division of Materials Sciences and Engineering (Grant No. DESC0001819) | en_US |
dc.language.iso | en_US | |
dc.publisher | American Physical Society | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1103/PhysRevLett.108.076601 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | APS | en_US |
dc.title | Quantum Hall Effect, Screening, and Layer-Polarized Insulating States in Twisted Bilayer Graphene | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Sanchez-Yamagishi, Javier et al. “Quantum Hall Effect, Screening, and Layer-Polarized Insulating States in Twisted Bilayer Graphene.” Physical Review Letters 108.7 (2012). © 2012 American Physical Society | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Physics | en_US |
dc.contributor.approver | Jarillo-Herrero, Pablo | |
dc.contributor.mitauthor | Sanchez-Yamagishi, Javier D. | |
dc.contributor.mitauthor | Jarillo-Herrero, Pablo | |
dc.relation.journal | Physical Review Letters | en_US |
dc.eprint.version | Final published version | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dspace.orderedauthors | Sanchez-Yamagishi, Javier; Taychatanapat, Thiti; Watanabe, Kenji; Taniguchi, Takashi; Yacoby, Amir; Jarillo-Herrero, Pablo | en |
dc.identifier.orcid | https://orcid.org/0000-0001-9703-6525 | |
dc.identifier.orcid | https://orcid.org/0000-0001-8217-8213 | |
mit.license | PUBLISHER_POLICY | en_US |
mit.metadata.status | Complete | |